Thermal characterization and stress analysis of Ho2O3 thin film on 4H–SiC substrate

Basit Öğe Kaydı
dc.contributor.authorOdesanya, Kazeem Olabisi
dc.contributor.authorAhmad, Roslina
dc.contributor.authorAndriyana, Andri
dc.contributor.authorBingöl, Sedat
dc.contributor.authorÇetinkaya, Rıdvan
dc.contributor.authorWong, Yew Hoong
dc.date.accessioned2023-12-08T10:38:37Z
dc.date.available2023-12-08T10:38:37Z
dc.date.issued2022en_US
dc.departmentDicle Üniversitesi, Mühendislik Fakültesi, Makine Mühendisliği Bölümüen_US
dc.description.abstractThe performance of a metal oxide semiconductor during operation could be hindered significantly due to thermodynamic instability and mismatch between the gate oxide layer and the substrate. Owing to variation in temperature during thermal applications, the thin film layers and substrates in complementary metal oxide semiconductor (CMOS) structures are subjected to high thermal stresses, which can result in large deformation and failure. In this study, the distribution of heat and thermal stress between the Ho2O3 thin film and the SiC substrate has been simulated numerically with finite element modelling and analysis software (ANSYS). This is necessary to emulate the thermal behaviour of the structure under different thermal loadings, and for each temperature loading, the effects of thermal stress and deformation on the structure were also evaluated. Based on the results of the simulation, an optimum temperature was suggested. The thermal stability and characteristics of the thin film layer/SiC structure were evaluated and validated for better electrical performance.en_US
dc.identifier.citationOdesanya, K. O., Ahmad, R., Andriyana, A., Bingöl, S., Çetinkaya, R. ve Wong, Y. H. (2022). Thermal characterization and stress analysis of Ho2O3 thin film on 4H–SiC substrate. Materials Science in Semiconductor Processing, 152, 1-6.
dc.identifier.doi10.1016/j.mssp.2022.107110
dc.identifier.endpage6en_US
dc.identifier.issn1369-8001
dc.identifier.scopus2-s2.0-85138781355
dc.identifier.scopusqualityQ1
dc.identifier.startpage1en_US
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1369800122006369?via%3Dihub
dc.identifier.urihttps://hdl.handle.net/11468/13073
dc.identifier.volume152en_US
dc.identifier.wosWOS:000862179900006
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorBingöl, Sedat
dc.institutionauthorÇetinkaya, Rıdvan
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDeformationen_US
dc.subjectInterfaceen_US
dc.subjectReliabilityen_US
dc.subjectSimulationen_US
dc.subjectTemperatureen_US
dc.subjectThermal stressen_US
dc.titleThermal characterization and stress analysis of Ho2O3 thin film on 4H–SiC substrateen_US
dc.titleThermal characterization and stress analysis of Ho2O3 thin film on 4H–SiC substrate
dc.typeArticleen_US

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