Relationship between barrier heights and ideality factors of H-terminated Pb/p-Si contacts with and without the interfacial oxide layer

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dc.contributor.authorAydin, ME
dc.contributor.authorAkkiliç, K
dc.contributor.authorKiliçoglu, T
dc.date.accessioned2024-04-24T16:10:52Z
dc.date.available2024-04-24T16:10:52Z
dc.date.issued2004
dc.departmentDicle Üniversitesien_US
dc.description.abstractWe have fabricated H-terminated Pb/p-type Si Schottky contacts with and without the native oxide layer to explain the difference between their barrier height values. It has been experimentally seen that the effective barrier heights (BHs) and ideality factor of identically fabricated diodes varied from diode to diode, and that there is a linear relationship between experimentally effective BHs and ideality factors of Schottky contacts that may be attributed to lateral inhomogeneities of the BHs. The BH value for the Pb/p-Si contacts without the interfacial oxide layer (MS sample) has ranged from 0.741 to 0.765 eV, and the ideality factor n from 1.001 to 1.040. The 1311 value for the Pb/p-Si contacts with the interfacial oxide layer (MIS sample) has ranged from 0.746 to 0.779 eV, and the ideality factor n value from 1.035 to 1.124. Furthermore, the extrapolations of the linear plot of the experimental BHs versus ideality factors have given laterally homogeneous barrier height values approximately 0.757 and 0.769 eV for the MS and MIS Pb/p-Si contacts, respectively. (C) 2003 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.apsusc.2003.10.022
dc.identifier.endpage323en_US
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.issue1-4en_US
dc.identifier.scopus2-s2.0-1342304911
dc.identifier.scopusqualityQ1
dc.identifier.startpage318en_US
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2003.10.022
dc.identifier.urihttps://hdl.handle.net/11468/15154
dc.identifier.volume225en_US
dc.identifier.wosWOS:000220116500039
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofApplied Surface Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Barrieren_US
dc.subjectMetal-Semiconductor Contacten_US
dc.subjectInterfacial Layeren_US
dc.subjectBarrier Inhomogeneityen_US
dc.titleRelationship between barrier heights and ideality factors of H-terminated Pb/p-Si contacts with and without the interfacial oxide layeren_US
dc.titleRelationship between barrier heights and ideality factors of H-terminated Pb/p-Si contacts with and without the interfacial oxide layer
dc.typeArticleen_US

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