The calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode

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dc.contributor.authorAkkilic, Kemal
dc.contributor.authorUzun, Ilhan
dc.contributor.authorKilicoglu, Tahsin
dc.date.accessioned2024-04-24T16:18:24Z
dc.date.available2024-04-24T16:18:24Z
dc.date.issued2007
dc.departmentDicle Üniversitesien_US
dc.description.abstractIn this study, the film of chitosan by adding the solution of chitosan being a polymeric compound on the top of an n-Si substrate and then by evaporating solvent was formed. It was seen that the chitosan/n-Si contact demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature. Average barrier height and ideality factor values for this structure were determined as 0.94 eV and 1.81, respectively. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitosan/n-Si substrate in the energy range (E-c-0.785) to (E-c-0.522) eV have been determined from the I-V characteristics. The interface state density N-ss ranges from 5.39 x 10(12) cm(-2) eV(-1) in (E-c-0.785) eV to 1.52 x 10(13) cm(-2) eV(-1) in (E-c-0.522) ev. The interface state density has an exponential rise with bias from the midgap towards the bottom of the conduction band. (c) 2007 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.synthmet.2007.03.009
dc.identifier.endpage302en_US
dc.identifier.issn0379-6779
dc.identifier.issue6-7en_US
dc.identifier.scopus2-s2.0-34249298645
dc.identifier.scopusqualityQ1
dc.identifier.startpage297en_US
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2007.03.009
dc.identifier.urihttps://hdl.handle.net/11468/16066
dc.identifier.volume157en_US
dc.identifier.wosWOS:000247520300009
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Barriersen_US
dc.subjectSchottky Diodesen_US
dc.subjectPolymeric Organic-Inorganic Semiconductor Contacten_US
dc.subjectChitosanen_US
dc.titleThe calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diodeen_US
dc.titleThe calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode
dc.typeArticleen_US

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