A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts

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dc.contributor.authorAsubay, Sezai
dc.contributor.authorTürüt, Abdülmecit
dc.date.accessioned2024-04-24T17:56:21Z
dc.date.available2024-04-24T17:56:21Z
dc.date.issued2020
dc.departmentDicle Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe temperature-dependent capacitance-voltage (C-V) and current-voltage (I–V) characteristics of the Ti/p-InP/ZnAu Schottky contacts were investigated in this study. The current across a metal-semiconductor Schottky contact can vary sensitively with the change of the Schottky barrier heights (SBHs) and sample temperature. Thereby, the value of the C-V barrier height (Formula presented.) increased and the value of the I–V barrier height (Formula presented.) decreased with a decrease in temperature. Such a change was ascribed to a Gaussian distribution of the spatial inhomogeneity of the SBHs over whole range of the measurement temperatures. Thus, the temperature dependences of the I–V and C-V characteristics were interpreted by a quantitative analysis of spatial distribution (Gaussian distribution) of the SBHs presented as a useful model. Thus, this quantitative analysis was determined from the change of (Formula presented.) values with (2kT ?1).en_US
dc.description.sponsorshipDicle Üniversitesien_US
dc.description.sponsorshipThe Authors wish to thank to Dicle University because the work was supported by Project No: DU BAP-07-01-27 of Dicle University.en_US
dc.identifier.citationAsubay, S. ve Türüt, A. (2020). A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts. Australian Journal of Electrical and Electronics Engineering, 17(4), 278-285.
dc.identifier.doi10.1080/1448837X.2020.1857564
dc.identifier.endpage285en_US
dc.identifier.issn1448-837X
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85098476661
dc.identifier.scopusqualityQ3
dc.identifier.startpage278en_US
dc.identifier.urihttps://doi.org/10.1080/1448837X.2020.1857564
dc.identifier.urihttps://hdl.handle.net/11468/23472
dc.identifier.urihttps://www.tandfonline.com/doi/full/10.1080/1448837X.2020.1857564
dc.identifier.volume17en_US
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherTaylor and Francis Ltd.en_US
dc.relation.ispartofAustralian Journal of Electrical and Electronics Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBarrier İnhomogeneityen_US
dc.subjectGaussian Distributionen_US
dc.subjectInp Semiconductoren_US
dc.subjectSchottky Barrier Diodeen_US
dc.subjectStandard Deviationen_US
dc.titleA useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contactsen_US
dc.titleA useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts
dc.typeArticleen_US

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