A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts
Yükleniyor...
Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Taylor and Francis Ltd.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The temperature-dependent capacitance-voltage (C-V) and current-voltage (I–V) characteristics of the Ti/p-InP/ZnAu Schottky contacts were investigated in this study. The current across a metal-semiconductor Schottky contact can vary sensitively with the change of the Schottky barrier heights (SBHs) and sample temperature. Thereby, the value of the C-V barrier height (Formula presented.) increased and the value of the I–V barrier height (Formula presented.) decreased with a decrease in temperature. Such a change was ascribed to a Gaussian distribution of the spatial inhomogeneity of the SBHs over whole range of the measurement temperatures. Thus, the temperature dependences of the I–V and C-V characteristics were interpreted by a quantitative analysis of spatial distribution (Gaussian distribution) of the SBHs presented as a useful model. Thus, this quantitative analysis was determined from the change of (Formula presented.) values with (2kT ?1).
Açıklama
Anahtar Kelimeler
Barrier İnhomogeneity, Gaussian Distribution, Inp Semiconductor, Schottky Barrier Diode, Standard Deviation
Kaynak
Australian Journal of Electrical and Electronics Engineering
WoS Q Değeri
Scopus Q Değeri
Q3
Cilt
17
Sayı
4
Künye
Asubay, S. ve Türüt, A. (2020). A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts. Australian Journal of Electrical and Electronics Engineering, 17(4), 278-285.
