The importance of the series resistance in calculating the characteristic parameters of the Schottky contacts

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dc.contributor.authorAydin, M. E.
dc.contributor.authorAkkilic, K.
dc.contributor.authorKilicoglu, T.
dc.date.accessioned2024-04-24T16:10:52Z
dc.date.available2024-04-24T16:10:52Z
dc.date.issued2006
dc.departmentDicle Üniversitesien_US
dc.description.abstractCd/p-Si Schottky barrier diodes (SBDs) with and without the native oxide layer have been fabricated to determine the importance of the fact that the series resistance value is considered in calculating the interface state density distribution (ISDD) from the forward bias current-voltage (I-V) characteristics of the Cd/p-Si SBDs. The statistical analysis yielded mean values of 0.71 +/- 0.02 eV and 1.24 +/- 0.12 for the BH and ideality factor of the Cd/p-Si SBDs (15 dots) without the native oxide layer (MS), respectively, and mean values of 0.79 +/- 0.02 eV and 1.36 +/- 0.06 eV for the Cd/p-Si SBDs (28 dots) with the native oxide layer (metal-insulating layer-semiconductor (MIS)). The interface state density (Nss) distributions of the devices were calculated taking into account their series resistance values. At the same energy position near the top of the valence band, the interface state density values without taking into account the series resistance value of the devices are almost one order of magnitude larger than Nss obtained taking into account series resistance value. (c) 2006 Published by Elsevier B.V.en_US
dc.identifier.doi10.1016/j.apsusc.2006.02.001
dc.identifier.endpage1309en_US
dc.identifier.issn0169-4332
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-33750720923
dc.identifier.scopusqualityQ1
dc.identifier.startpage1304en_US
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2006.02.001
dc.identifier.urihttps://hdl.handle.net/11468/15155
dc.identifier.volume253en_US
dc.identifier.wosWOS:000242818000044
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofApplied Surface Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIdeality Factoren_US
dc.subjectInterface States Distributionen_US
dc.subjectSchottky Barrier Heighten_US
dc.subjectSeries Resistanceen_US
dc.titleThe importance of the series resistance in calculating the characteristic parameters of the Schottky contactsen_US
dc.titleThe importance of the series resistance in calculating the characteristic parameters of the Schottky contacts
dc.typeArticleen_US

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