THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE

Basit Öğe Kaydı
dc.contributor.authorEjderha, Kadir
dc.contributor.authorAsubay, Sezai
dc.contributor.authorYildirim, Nezir
dc.contributor.authorGullu, Omer
dc.contributor.authorTurut, Abdulmecit
dc.contributor.authorAbay, Bahattin
dc.date.accessioned2024-04-24T17:12:03Z
dc.date.available2024-04-24T17:12:03Z
dc.date.issued2017
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current-voltage (I-V) characteristics have been measured in the sample temperature range of 100-400K with steps of 20 K. The characteristic parameters of both Ti/ p-InP SDs have been compared with each other. The barrier height (BH) values of 0.824 and 0.847 at 300K have been obtained for the sputtered and the evaporated SDs, respectively. This low BH value for the sputtered SD has been attributed to some defects introduced by the sputtered deposition technique over a limited depth in to the p-type substrate. The BH of the evaporated and sputtered diodes has decreased with the standard deviations of 58 and 64mV obeying to double-Gaussian distribution (GD) in 220-400K range, respectively, and it has seen a more sharper reduction for the BHs with the standard deviations of 93 and 106 mV in 100-220K range. The Richardson constant values of 89.72 and 53.24 A(Kcm)(-2) (in 220-400K range) for the evaporated and sputtered samples, respectively, were calculated from the modiified ln(I-0/T-2) - q(2)sigma(2)(s)/2k(2)T(2) vs (kT)(-1) curves by GD of the BHs. The value 53.24A (Kcm)(-2) for the sputtered sample in high temperatures range is almost the same as the known Richardson constant value of 60 A(Kcm)(-2) for p-type InP.en_US
dc.description.sponsorshipDicle University [DUBAP-07-01-27]; Turkish Scientific and Technological Research Council of Turkey (TUBITAK) [105T487]; Ataturk University [BAP 2006/51]en_US
dc.description.sponsorshipThis work was supported by Dicle University, Project No: DUBAP-07-01-27, the Turkish Scientific and Technological Research Council of Turkey (TUBITAK, Project No. 105T487) and (Ataturk University, Project No. BAP 2006/51). The authors wish to thank to Dicle University, TUBITAK and Ataturk University.en_US
dc.identifier.doi10.1142/S0218625X17500524
dc.identifier.issn0218-625X
dc.identifier.issn1793-6667
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-84990175460
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1142/S0218625X17500524
dc.identifier.urihttps://hdl.handle.net/11468/17831
dc.identifier.volume24en_US
dc.identifier.wosWOS:000402864700012
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherWorld Scientific Publ Co Pte Ltden_US
dc.relation.ispartofSurface Review and Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMetal-Semiconductor Contactsen_US
dc.subjectSchottky Barrier Diodeen_US
dc.subjectBarrier Inhomogeneityen_US
dc.subjectInp Semiconductoren_US
dc.titleTHE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATUREen_US
dc.titleTHE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu