Temperature dependence of current-voltage characteristics of Sn/p-Si Schottky contacts

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dc.contributor.authorAydin, M. E.
dc.contributor.authorGullu, O.
dc.contributor.authorYildirim, N.
dc.date.accessioned2024-04-24T16:18:16Z
dc.date.available2024-04-24T16:18:16Z
dc.date.issued2008
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe current-voltage (I-V) characteristics of Sn/p-Si Schottky barrier diode have been measured over a wide range of temperature (80-300 K) and interpreted on the basis of thermionic emission mechanism by merging the concept of barrier inhomogeneities through a Gaussian distribution function. The analysis has revealed an anomalous decrease of apparent barrier height Phi(b0), increase of ideality factor n, and nonlinearity of the activation energy plot at lower temperatures. A Phi(b0) versus 1/T plot has been drawn to obtain evidence of a Gaussian distribution of barrier heights, and values of 0.97 eV and 0.084 V for the mean barrier height Phi(b0) and standard deviation sigma(0) have been obtained, respectively, from this plot. A modified ln(I-0/T-2)-(q(2)sigma(2)/2k(2)T(2)) versus 1/T plot gives Phi(b0) and Richardson constant A** as 0.95 eV and 15.6 A cm(-2) K-2, respectively. It can be concluded that the temperature dependent I-V characteristics of the Sn/p-Si Schottky barrier diode can be successfully explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights. We have also discussed whether or not the junction current has been connected with thermionic field-emission mechanism. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physb.2007.08.089
dc.identifier.endpage138en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-36549076487
dc.identifier.scopusqualityQ2
dc.identifier.startpage131en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2007.08.089
dc.identifier.urihttps://hdl.handle.net/11468/15941
dc.identifier.volume403en_US
dc.identifier.wosWOS:000252693300022
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Barrier Heighten_US
dc.subjectGaussian Distributionen_US
dc.subjectActivation Energyen_US
dc.titleTemperature dependence of current-voltage characteristics of Sn/p-Si Schottky contactsen_US
dc.titleTemperature dependence of current-voltage characteristics of Sn/p-Si Schottky contacts
dc.typeArticleen_US

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