Modification of electrical properties of the Au/1,1? dimethyl ferrocenecarboxylate/n-Si Schottky diode
dc.contributor.author | Aydin, M. Enver | |
dc.contributor.author | Yakuphanoglu, Fahrettin | |
dc.contributor.author | Ozturk, Gulsen | |
dc.date.accessioned | 2024-04-24T16:18:24Z | |
dc.date.available | 2024-04-24T16:18:24Z | |
dc.date.issued | 2010 | |
dc.department | Dicle Üniversitesi | en_US |
dc.description.abstract | The electrical and interface state density properties of the Au/1,1' dimethyl ferrocenecarboxylate (DMFC)/n-Si structure have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The Au/DMFC/n-Si structure exhibits a rectifying behavior with a non-ideal I-V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC/n-Si Schottky diode is lower than that of Au/n-Si Schottky diode. The interface state density of the diode was determined from G/omega-f plots and was of order of 5.61 x 10(12) eV(-1) cm(-2). It is evaluated that the electrical properties of Au/n-Si diode is controlled using 1' dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC/n-Si structure gives new electronic parameters. (C) 2010 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | Feyzi AKKAYA Scientific Activates Supporting Fund (FABED); DUBAP at Dicle University in Turkey [DUBAP-06-FF-83] | en_US |
dc.description.sponsorship | This work was supported by Feyzi AKKAYA Scientific Activates Supporting Fund (FABED) and DUBAP at Dicle University in Turkey with DUBAP-06-FF-83 number project. One of author wishes to thank FABED for young scientist grant. | en_US |
dc.identifier.doi | 10.1016/j.synthmet.2010.08.006 | |
dc.identifier.endpage | 2190 | en_US |
dc.identifier.issn | 0379-6779 | |
dc.identifier.issue | 19-20 | en_US |
dc.identifier.scopus | 2-s2.0-77957657736 | en_US |
dc.identifier.scopusquality | N/A | en_US |
dc.identifier.startpage | 2186 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.synthmet.2010.08.006 | |
dc.identifier.uri | https://hdl.handle.net/11468/16071 | |
dc.identifier.volume | 160 | en_US |
dc.identifier.wos | WOS:000283681900022 | en_US |
dc.identifier.wosquality | Q2 | en_US |
dc.indekslendigikaynak | Web of Science | |
dc.indekslendigikaynak | Scopus | |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science Sa | en_US |
dc.relation.ispartof | Synthetic Metals | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Organic Schottky Diode | en_US |
dc.subject | Interface Properties | en_US |
dc.title | Modification of electrical properties of the Au/1,1? dimethyl ferrocenecarboxylate/n-Si Schottky diode | en_US |
dc.type | Article | en_US |