Fabrication and electrical properties of an organic-inorganic device based on Coumarin 30 dye

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Tarih

2014

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Elsevier Sci Ltd

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

A Coumarin 30/p-Si organic-inorganic device was fabricated by forming a Coumarin 30 thin film on a p-Si semiconductor. The resulting structure had excellent rectifying properties. Electrical parameters of the structure were determined from current-voltage (I-V) measurements in the temperature range 300-380 K. While the barrier height (phi(b)) increased with increasing temperature, the ideality factor and series resistance of the diode decreased. I-V measurements of the structure were also performed under a solar simulator with AM1.5 filter and 100 mW/cm(2) illumination intensity. The structure had 59 mu A short-circuit current and 337 mV open-circuit voltage. Furthermore, capacitance-voltage (C-V) measurements of an Al/Coumarin 30/p-Si diode were carried out at various frequencies. The phi(b), value obtained by using C-V values was compared with that obtained by using I-V data. (C) 2014 Elsevier Ltd. All rights reserved.

Açıklama

Anahtar Kelimeler

Coumarin 30, Organic-Inorganic Device, Barrier Height, Temperature Effect

Kaynak

Materials Science in Semiconductor Processing

WoS Q Değeri

Q2

Scopus Q Değeri

Q1

Cilt

24

Sayı

Künye