Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
| dc.contributor.author | Aydin, Mehmet Enver | |
| dc.contributor.author | Yildirim, Nezir | |
| dc.contributor.author | Tueruet, Abdulmecit | |
| dc.date.accessioned | 2024-04-24T16:24:11Z | |
| dc.date.available | 2024-04-24T16:24:11Z | |
| dc.date.issued | 2007 | |
| dc.department | Dicle Üniversitesi | en_US |
| dc.description.abstract | The current-voltage (I-V) characteristics of Ni/4H-nSiC Schottky diodes have been measured in the temperature range of 180-300 K with a temperature step of 20 K. An experimental barrier height (BH) Phi(ap) value of about 1.32 eV was obtained for the Ni/4H-nSiC Schottky diode at the 300 K. A decrease in the experimental BH Phi(ap) and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights due to the BH inhomogeneities at the metal-semiconductor interface. (Phi) over bar (b) and A(*) as 1.71 eV, and 156.3 A/cm(2) K-2, respectively, have been calculated from a modified ln(I-0/T-2)-q(2)sigma(2)(s)/2k(2)T(2) vs 1/T plot using the temperature-dependent experimental I-V characteristics of the Ni/4H-nSiC contact. The Richardson constant value of 156.3 A/cm(2) K-2 is in close agreement with 146 A/cm(2) K-2 known for 4H-nSiC. (C) 2007 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2769284 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.issn | 1089-7550 | |
| dc.identifier.issue | 4 | en_US |
| dc.identifier.scopus | 2-s2.0-34548448477 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.uri | https://doi.org/10.1063/1.2769284 | |
| dc.identifier.uri | https://hdl.handle.net/11468/16564 | |
| dc.identifier.volume | 102 | en_US |
| dc.identifier.wos | WOS:000249156200052 | |
| dc.identifier.wosquality | Q1 | |
| dc.indekslendigikaynak | Web of Science | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | en_US |
| dc.publisher | Amer Inst Physics | en_US |
| dc.relation.ispartof | Journal of Applied Physics | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | [No Keyword] | en_US |
| dc.title | Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts | en_US |
| dc.title | Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts | |
| dc.type | Article | en_US |
