Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode

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dc.contributor.authorAkkilic, K.
dc.contributor.authorOcak, Y. S.
dc.contributor.authorKilicoglu, T.
dc.contributor.authorIlhan, S.
dc.contributor.authorTemel, H.
dc.date.accessioned2024-04-24T16:10:59Z
dc.date.available2024-04-24T16:10:59Z
dc.date.issued2010
dc.departmentDicle Üniversitesien_US
dc.description.abstractIn this Study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (11) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current-voltage (I-V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I-V characteristics range from 2.15 x 10(13) cm(-2) eV(-1) at (E-c - 0.66) eV to 5.56 x 10(12) cm(-2) eV(-1) at (E-c - 0.84) eV. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.cap.2009.06.019
dc.identifier.endpage341en_US
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-69249221323
dc.identifier.scopusqualityQ2
dc.identifier.startpage337en_US
dc.identifier.urihttps://doi.org/10.1016/j.cap.2009.06.019
dc.identifier.urihttps://hdl.handle.net/11468/15218
dc.identifier.volume10en_US
dc.identifier.wosWOS:000270584900064
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofCurrent Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOrganic-Inorganic Semiconductor Contacten_US
dc.subjectSchottky Diodeen_US
dc.subjectIdeality Factoren_US
dc.subjectBarrier Heighten_US
dc.titleCalculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diodeen_US
dc.titleCalculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode
dc.typeArticleen_US

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