The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method

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dc.contributor.authorKilicoglu, T.
dc.contributor.authorAydin, M. E.
dc.contributor.authorOcak, Y. S.
dc.date.accessioned2024-04-24T16:18:16Z
dc.date.available2024-04-24T16:18:16Z
dc.date.issued2007
dc.departmentDicle Üniversitesien_US
dc.description.abstractAl/methyl red/p-Si Schottky barrier diodes (SBD) have been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrates, and then evaporating the solvent. The electronic and interface state density distribution properties were obtained from the current-voltage (I-P) and the capacitance-voltage (C-V) characteristics (high and low frequency) of Al/methyl red/p-Si SBD at room temperature. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range from (0.675-E-v) eV to (0.783-E-v) eV has been determined. In addition, the interface state density N-ss range from 6.12 x 10(13) cm(-2) eV(-1) in (0.675-E-v) eV to 4.31 x 10(12) cm(-2) eV(-1) in (0.783-E-v) eV. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valence band. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physb.2006.06.126
dc.identifier.endpage248en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue1-2en_US
dc.identifier.scopus2-s2.0-33751211552
dc.identifier.scopusqualityQ2
dc.identifier.startpage244en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2006.06.126
dc.identifier.urihttps://hdl.handle.net/11468/15939
dc.identifier.volume388en_US
dc.identifier.wosWOS:000243887400039
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Diodesen_US
dc.subjectOrganic-Inorganic Semiconductor Contacten_US
dc.subjectMethyl Reden_US
dc.titleThe determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance methoden_US
dc.titleThe determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method
dc.typeArticleen_US

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