Nanostructured device based on coated ZnO layer as a window in solar cell applications

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dc.authorid0000-0001-8754-1720en_US
dc.contributor.authorMokhtari, Hossein
dc.contributor.authorBenhaliliba, Mostefa
dc.contributor.authorBoukhachem, A.
dc.contributor.authorAida, M. S.
dc.contributor.authorOcak, Yusuf Selim
dc.date.accessioned2022-08-08T08:53:26Z
dc.date.available2022-08-08T08:53:26Z
dc.date.issued2018en_US
dc.departmentDicle Üniversitesi, Ziya Gökalp Eğitim Fakültesi, Matematik ve Fen Bilimleri Eğitimi Bölümüen_US
dc.description.abstractThis work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5 °C. For the as-grown layers, M- to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coeffi-cient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E 0 as well as dispersion energy E d were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.en_US
dc.identifier.citationMokhtari, H., Benhaliliba, M., Boukhachem, A., Aida, M. S. ve Ocak, Y. S. (2013). Nanostructured device based on coated ZnO layer as a window in solar cell applications. Materials Science- Poland, 36(4), 570-583.en_US
dc.identifier.doi10.2478/msp-2018-0090en_US
dc.identifier.endpage583en_US
dc.identifier.issn2083-1331
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-85060003437en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage570en_US
dc.identifier.urihttps://www.sciendo.com/article/10.2478/msp-2018-0090
dc.identifier.urihttps://hdl.handle.net/11468/10151
dc.identifier.volume36en_US
dc.identifier.wosWOS:000457740500006
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorOcak, Yusuf Selim
dc.language.isoenen_US
dc.publisherSciendoen_US
dc.relation.ispartofMaterials Science- Polanden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectElectrical measurementsen_US
dc.subjectIdeality factoren_US
dc.subjectNanostructured ZnOen_US
dc.subjectOptical propertiesen_US
dc.subjectSpray pyrolysisen_US
dc.subjectStructural propertiesen_US
dc.titleNanostructured device based on coated ZnO layer as a window in solar cell applicationsen_US
dc.typeArticleen_US

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