Temperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction

Basit Öğe Kaydı
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorBozkaplan, Cihat
dc.contributor.authorAhmed, Honar Salah
dc.contributor.authorTombak, Ahmet
dc.contributor.authorGenisel, Mustafa Fatih
dc.contributor.authorAsubay, Sezai
dc.date.accessioned2024-04-24T16:14:54Z
dc.date.available2024-04-24T16:14:54Z
dc.date.issued2017
dc.departmentDicle Üniversitesien_US
dc.description.abstractMoS2 is one of the most promising materials due to its exciting properties. Al/MoS2/n-Si heterojunction diode was acquired via the formation of a MoS2 thin film on n-Si semiconductor using radio frequency (RF) sputtering technique and an evaporation of Al metal on MoS2/n-Si structure. The morphological and optical properties of the RF sputtered MoS2 thin film were examined using atomic force microscopy (AFM), scanning electron microscopy (SEM) and UV-vis data. The electrical parameters of Al/MoS2/n-Si heterojunction on temperature were investigated using its current-voltage (I-V) measurements within 150-400 K in the dark. The results showed that while the ideality factor and series resistance values of the junction decreased, the barrier height values increased with the increase in temperature. The linear correlation between ideality factor and barrier height values was also reported for Al/MoS2/n-Si heterojunction. (C) 2017 Elsevier GmbH. All rights reserved.en_US
dc.identifier.doi10.1016/j.ijleo.2017.06.037
dc.identifier.endpage650en_US
dc.identifier.issn0030-4026
dc.identifier.scopus2-s2.0-85020930294
dc.identifier.scopusqualityQ1
dc.identifier.startpage644en_US
dc.identifier.urihttps://doi.org/10.1016/j.ijleo.2017.06.037
dc.identifier.urihttps://hdl.handle.net/11468/15498
dc.identifier.volume142en_US
dc.identifier.wosWOS:000405975100079
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Gmbhen_US
dc.relation.ispartofOptik
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMos2en_US
dc.subjectHeterojunctionen_US
dc.subjectElectrical Propertiesen_US
dc.subjectTemperature Dependenceen_US
dc.titleTemperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunctionen_US
dc.titleTemperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu