Current-voltage and capacitance-voltage characteristics of Fe/p-InP Schottky barriers
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Tarih
2010
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Taylor & Francis Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The electrical properties of identically prepared Fe/p-InP (29 dots in total) Schottky barrier diodes on the same p-type InP single crystal have been studied in this article. The effective Schottky barrier heights (SBHs) and ideality factors obtained from current-voltage (I-V) characteristics differ from diode to diode. The SBHs and the ideality factors for the Fe/p-InP diodes ranged from 0.71 to 0.86eV and 1.21 to 1.69, respectively. A lateral homogeneous SBH value of 0.91eV for the Fe/p-InP diodes has been calculated from the linear relationship between barrier heights and ideality factors, which can be explained by lateral inhomogeneities of the SBHs.
Açıklama
Anahtar Kelimeler
Semiconductor, Inp, Schottky Barrier, Ideality Factor
Kaynak
International Journal of Electronics
WoS Q Değeri
Q4
Scopus Q Değeri
Q3
Cilt
97
Sayı
8
