Production of Cu2SnS3 thin films depending on the sulphur flow rate and annealing temperature time

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dc.contributor.authorCandan, Ilhan
dc.contributor.authorGezgin, Serap Yigit
dc.contributor.authorBaturay, Silan
dc.contributor.authorKilic, Hamdi Sukur
dc.date.accessioned2024-04-24T16:15:22Z
dc.date.available2024-04-24T16:15:22Z
dc.date.issued2023
dc.departmentDicle Üniversitesien_US
dc.description.abstractCu2SnS3 thin films have been produced using spin coating method for 30 and 40 sccm sulphur flux rate during three annealing times of 15, 30 and 60 minutes at 550 degrees C. Crystal properties, morphological structure, phase structure, elemental contents and optical properties of Cu2SnS3 thin films have comprehensively been studied by XRD, SEM, Raman, EDX, UV-vis, and photoluminescence analysis, respectively. The crystalline size, dislocation density, microstrain and crystalline number of Cu2SnS3 thin films have been calculated. Cu2SnS3-A2 thin film annealed for 30 minutes has the best crystal structure. Cu2SnS3 thin films contain four different phases depending on sulphur flux rate and the annealing temperature duration. In addition, their band gaps, extinction coefficients and Urbach energies were determined. The refractive index and high frequency dielectric constant of Cu2SnS3 thin film were calculated using Herve and Vandamme, Moss and Ravindra relations and the values found were found to be compatible with one another. The skin depth and optical conductivity of Cu2SnS3 thin films were obtained. While the photon energy increased, their skin depth decreased and the optical conductivity considerably increased.en_US
dc.description.sponsorshipSelcuk University Scientific Research Project (BAP) [15201070, 19401140]; Selcuk University, High Technology Research and Application Center (IL-TEK); SULTAN Center for infrastructures; Dicle University Scientific Research Project (BAP) [FEN.18.007]en_US
dc.description.sponsorshipAcknowledgements Authors wish to kindly thank the following funding bodies for their support.-Selcuk University Scientific Research Project (BAP) Coordination for the support with the number 15201070 and 19401140 projects.-Selcuk University, High Technology Research and Application Center (IL-TEK) and SULTAN Center for infrastructures.-Dicle University Scientific Research Project (BAP) Coordination for the support with the number FEN.18.007 project.en_US
dc.identifier.doi10.1016/j.jssc.2021.122711
dc.identifier.endpage202en_US
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issue3-4en_US
dc.identifier.scopus2-s2.0-85162874918
dc.identifier.scopusqualityQ4
dc.identifier.startpage191en_US
dc.identifier.urihttps://doi.org/10.1016/j.jssc.2021.122711
dc.identifier.urihttps://hdl.handle.net/11468/15777
dc.identifier.volume25en_US
dc.identifier.wosWOS:001031942700013
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCu2sns3en_US
dc.subjectCts Thin Filmen_US
dc.subjectCrystalline Sizeen_US
dc.subjectRefractive Indexen_US
dc.subjectSkin Depthen_US
dc.titleProduction of Cu2SnS3 thin films depending on the sulphur flow rate and annealing temperature timeen_US
dc.titleProduction of Cu2SnS3 thin films depending on the sulphur flow rate and annealing temperature time
dc.typeArticleen_US

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