Electrical characterization of the Al/new fuchsin/n-Si organic-modified device

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dc.contributor.authorGullu, O.
dc.contributor.authorAsubay, S.
dc.contributor.authorAydogan, S.
dc.contributor.authorTurut, A.
dc.date.accessioned2024-04-24T16:18:16Z
dc.date.available2024-04-24T16:18:16Z
dc.date.issued2010
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I-V characteristic of the device shows a good rectification. The ideality factor and the barrier height from the I-V characteristics have been determined as 3.14 and 0.80 eV, respectively. A modified Norde's function combined with the conventional I-V method has been used to extract the parameters including the barrier height and the series resistance. The barrier height and the series resistance obtained from Norde's function have been compared with those from Cheung functions, and it has been seen that there was a good agreement between those from both method. It has also been seen that the values of diode capacitance increased up to the constant values for the forward bias. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physe.2009.11.079
dc.identifier.endpage1416en_US
dc.identifier.issn1386-9477
dc.identifier.issn1873-1759
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-77349090896
dc.identifier.scopusqualityQ1
dc.identifier.startpage1411en_US
dc.identifier.urihttps://doi.org/10.1016/j.physe.2009.11.079
dc.identifier.urihttps://hdl.handle.net/11468/15944
dc.identifier.volume42en_US
dc.identifier.wosWOS:000276541500028
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica E-Low-Dimensional Systems & Nanostructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Diodeen_US
dc.subjectOrganic Semiconductoren_US
dc.subjectIdeality Factoren_US
dc.subjectSeries Resistanceen_US
dc.titleElectrical characterization of the Al/new fuchsin/n-Si organic-modified deviceen_US
dc.titleElectrical characterization of the Al/new fuchsin/n-Si organic-modified device
dc.typeArticleen_US

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