Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye

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dc.contributor.authorYakuphanoglu, F.
dc.contributor.authorOcak, Y. S.
dc.contributor.authorKilicoglu, T.
dc.contributor.authorFarooq, W. A.
dc.date.accessioned2024-04-24T16:15:28Z
dc.date.available2024-04-24T16:15:28Z
dc.date.issued2011
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe electronic parameters and photovoltaic properties of the Au/methylene blue/n-Si diodes were investigated by current-voltage and capacitance-conductance-frequency techniques. The diode exhibits a non-ideal behavior due the series resistance, organic layer and oxide layer. The barrier height (1.04 eV) of the Au/methylene blue/n-Si is higher than that of Au/n-Si Schottky diode (0.83 eV) due to an excess barrier formed by organic layer. The interface state density of the diode was determined using a conductance technique and was found to be 3.25 x 10(12) eV(-1) cm(-2). The diode shows a photovoltaic behavior with a maximum open circuit voltage V-oc of 0.23 V and short-circuit current I-sc of 20.8 mu A under 100 mW/cm(2). It is evaluated that Au/methylene blue/n-Si is an organic-on-inorganic photodiode with the obtained electronic parameters and methylene blue organic dye controls the interface and electrical properties of conventional metal/n-type silicon junction. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipGlobal Research Network for Electronic Devices & Biosensors (GRNEDB); King Saud University; Feyzi AKKAYA Scientific Activates Supporting Fund (FABED); KSUen_US
dc.description.sponsorshipThis work was supported by Global Research Network for Electronic Devices & Biosensors (GRNEDB) and King Saud University and Feyzi AKKAYA Scientific Activates Supporting Fund (FABED). One of author wishes to thank KSU and FABED for young scientist grant.en_US
dc.identifier.doi10.1016/j.mee.2011.04.029
dc.identifier.endpage2954en_US
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-80051567474
dc.identifier.scopusqualityQ2
dc.identifier.startpage2951en_US
dc.identifier.urihttps://doi.org/10.1016/j.mee.2011.04.029
dc.identifier.urihttps://hdl.handle.net/11468/15818
dc.identifier.volume88en_US
dc.identifier.wosWOS:000295557400023
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInorganic-Organic Diodeen_US
dc.subjectOrganic Semiconductorsen_US
dc.subjectInterface State Propertiesen_US
dc.titleInterface control and photovoltaic properties of n-type silicon/metal junction by organic dyeen_US
dc.titleInterface control and photovoltaic properties of n-type silicon/metal junction by organic dye
dc.typeArticleen_US

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