Temperature-dependent behavior of Ti/p-InP/ZnAu schottky barrier diodes

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dc.contributor.authorAsubay, Sezai
dc.contributor.authorGullu, Omer
dc.contributor.authorAbay, Bahattin
dc.contributor.authorTurut, Abdulmecit
dc.contributor.authorYilmaz, Ali
dc.date.accessioned2024-04-24T17:07:59Z
dc.date.available2024-04-24T17:07:59Z
dc.date.issued2008
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe current-voltage ( I-V) characteristics of Ti/p-InP Schottky diodes have been measured in a wide temperature range with a temperature step of 20 K. An experimental barrier height ( BH) Phi(ap) value of about 0.85 eV was obtained for the Ti/p-InP Schottky diode at 300 K. A decrease in the experimental BH Phi(ap) and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of a thermionic emission mechanism with the Gaussian distribution of the barrier heights due to the BH inhomogeneities at the metal semiconductor interface. (Phi) over bar (b) and A* as 1.01 eV, and 138 A cm(-2) K-2, respectively, have been calculated from a modified ln( I-0/T-2) - q(2)sigma(2)(s)/2k(2)T(2) versus 1/T plot. This BH value is in close agreement with the values of 0.99 eV obtained from the Phi(ap) versus 1/T and ln( I-0/T-2) versus 1/nT plots.en_US
dc.identifier.doi10.1088/0268-1242/23/3/035006
dc.identifier.issn0268-1242
dc.identifier.issn1361-6641
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-42549100502
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/0268-1242/23/3/035006
dc.identifier.urihttps://hdl.handle.net/11468/17133
dc.identifier.volume23en_US
dc.identifier.wosWOS:000254385900006
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofSemiconductor Science and Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword]en_US
dc.titleTemperature-dependent behavior of Ti/p-InP/ZnAu schottky barrier diodesen_US
dc.titleTemperature-dependent behavior of Ti/p-InP/ZnAu schottky barrier diodes
dc.typeArticleen_US

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