Structural and electronic characterization of silicon based MIS contact by xanthene dye molecules (Erythrosine B)

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dc.authorid0000-0002-8513-7860en_US
dc.authorid0000-0003-4771-816Xen_US
dc.authorid0000-0002-3785-6190en_US
dc.contributor.authorSunkur, Murat
dc.contributor.authorAva, Canan Aytuğ
dc.contributor.authorGüllü, Ömer
dc.date.accessioned2023-08-21T13:23:41Z
dc.date.available2023-08-21T13:23:41Z
dc.date.issued2023en_US
dc.departmentDicle Üniversitesi Bilim ve Teknoloji Uygulama ve Araştırma Merkezien_US
dc.description.abstractThe effect of erythrosine B (ERY) organic material as an interface layer on the electronic characteristics of the Al/p-Si junction is examined in the present work. AFM, NMR, UV–Vis and FTIR measurements have been conducted on the ERY dye molecule. The ERY film on the surface of the substrate is coated with nanoparticles, according to the surface analysis performed using the AFM technique. The basic diode parameters of Al/p-Si and Al/ERY/p-Si junctions were measured by utilizing current-voltage (I–V) and capacitance-voltage (C-V) techniques. The junctions with and without organic interfacial layers were found to have ideality factors of 1.931 and 1.925, respectively. For MS and MIS contacts, the estimated values of barrier height were 0.592 eV and 0.937 eV, respectively. Additionally, the series resistances for the MS and MIS structures by utilizing Norde function, were determined to be 0.14 kΩ and 322.85 kΩ, respectively. In addition, the reverse bias 1/C2-V characteristics were used to analyze the barrier height values and compare the findings to those from I-V method. The experimental findings demonstrated that the Al/ERY/p-Si MIS diode has a barrier height that is remarkably greater than that of the reference Al/p-Si junction. Placement of the ERY dye interlayer between a metal and a semiconductor could enhance and regulate the performance and characteristic of these types of junctions.en_US
dc.identifier.citationSunkur, M., Ava, C. A. ve Güllü, Ö. (2023). Structural and electronic characterization of silicon based MIS contact by xanthene dye molecules (Erythrosine B). Surfaces and Interfaces, (39), 1-13.en_US
dc.identifier.doi10.1016/j.surfin.2023.102900
dc.identifier.endpage13en_US
dc.identifier.issn2468-0230
dc.identifier.issue39en_US
dc.identifier.scopus2-s2.0-85153851845
dc.identifier.scopusqualityQ1
dc.identifier.startpage1en_US
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S2468023023002705?via%3Dihub
dc.identifier.urihttps://hdl.handle.net/11468/12527
dc.identifier.wosWOS:000993009900001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorAva, Canan Aytuğ
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.relation.ispartofSurfaces and Interfaces
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThin filmsen_US
dc.subjectErythrosine B (ERY)en_US
dc.subjectMIS contacten_US
dc.subjectOrganic dyesen_US
dc.subjectIdeality factoren_US
dc.titleStructural and electronic characterization of silicon based MIS contact by xanthene dye molecules (Erythrosine B)en_US
dc.titleStructural and electronic characterization of silicon based MIS contact by xanthene dye molecules (Erythrosine B)
dc.typeArticleen_US

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