The importance of the neutral region resistance for the calculation of the interface state in Pb/p-Si Schottky contacts

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dc.contributor.authorAydín, ME
dc.contributor.authorAkkílíc, K
dc.contributor.authorKílíçoglu, T
dc.date.accessioned2024-04-24T16:15:49Z
dc.date.available2024-04-24T16:15:49Z
dc.date.issued2004
dc.departmentDicle Üniversitesien_US
dc.description.abstractWe have fabricated H-terminated Pb/p-type Si Schottky contacts with and without the native oxide layer to explain the importance of the fact that the neutral region resistance value is considered in calculating the interface state density distribution from the nonideal forward bias current-voltage (I P) characteristics. The diodes with the native oxide layer (metal-insulating layer-semiconductor (MIS)) showed nonideal I-V behavior with an ideality factor value of 1.310 and the barrier height value of 0.746eV. An ideality factor value of 1.065 and a barrier height value of 0.743eV were obtained for the diodes without the native oxide layer (MS). At the same energy position near the top of the valance band, the calculated interface states density (N-ss) values, obtained without taking into account the series resistance of the devices (i.e. without subtracting the voltage drop across the series resistance from the applied voltage values V) is almost one order of magnitude larger than N-ss values obtained by taking into account the series resistance. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physb.2004.08.003
dc.identifier.endpage317en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue1-4en_US
dc.identifier.scopus2-s2.0-5444230846
dc.identifier.scopusqualityQ2
dc.identifier.startpage312en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2004.08.003
dc.identifier.urihttps://hdl.handle.net/11468/15936
dc.identifier.volume352en_US
dc.identifier.wosWOS:000224735100042
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Barrieren_US
dc.subjectSeries Resistanceen_US
dc.subjectOhmic Contacten_US
dc.subjectSiliconen_US
dc.titleThe importance of the neutral region resistance for the calculation of the interface state in Pb/p-Si Schottky contactsen_US
dc.titleThe importance of the neutral region resistance for the calculation of the interface state in Pb/p-Si Schottky contacts
dc.typeArticleen_US

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