Deposition and Characterization of Si Substituted Cu2ZnSnS4 Thin Films

dc.contributor.authorAva, Canan Aytug
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorCelik, Omer
dc.contributor.authorAsubay, Sezai
dc.date.accessioned2024-04-24T16:02:50Z
dc.date.available2024-04-24T16:02:50Z
dc.date.issued2023
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe influence of the Si substitution ratio on the structural, morphological, and optical properties of Cu2ZnSnS4 (CZTS) thin films was examined. The Cu2Zn(SixSn1-x)S-4 thin films (x = 0, 0.25, 0.50, 0.75, and 1) were deposited on soda-lime glasses by spin coating technique and annealed in a quartz tube at 550 degrees C under H2S:Ar (1:9) flows. The X-ray diffraction (XRD) patterns showed that the crystal sizes of CZTS thin film decreased rapidly from 30 nm to 19 nm after the substitution of 25% Si to the Sn sites (Cu2Zn(Si0.25Sn0.75)S-4 thin films) and increased to the same range after increasing the Si substitution ratio. It was attributed to the highest dislocation density and strain values of the film after partial Si substitution to the structure. It was also reported that the Si substitution for Cu2ZnSnS4 (CZTS) structure shifted both main XRD (from 28.51 to 28.62 degrees) and Raman peaks (from 332 to 334 cm(-1)). Furthermore, the strong influence of Si addition on the optical properties of the films was examined. It was seen that the optical band gap of CZTS increases from 1.51 to 3.22 eV with the increase in Si ratio.en_US
dc.identifier.doi10.1007/s12633-022-02018-6
dc.identifier.endpage458en_US
dc.identifier.issn1876-990X
dc.identifier.issn1876-9918
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85134642736
dc.identifier.scopusqualityQ2
dc.identifier.startpage451en_US
dc.identifier.urihttps://doi.org/10.1007/s12633-022-02018-6
dc.identifier.urihttps://hdl.handle.net/11468/14929
dc.identifier.volume15en_US
dc.identifier.wosWOS:000829732200001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofSilicon
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCztsen_US
dc.subjectThin Filmen_US
dc.subjectSi Substitutionen_US
dc.titleDeposition and Characterization of Si Substituted Cu2ZnSnS4 Thin Filmsen_US
dc.titleDeposition and Characterization of Si Substituted Cu2ZnSnS4 Thin Films
dc.typeArticleen_US

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