The influence of substrate temperature on electrical parameters of reactive sputtered Cr2O3/n-Si heterojunctions
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Tarih
2016
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Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Bu çalışmada, alttaş sıcaklığının Cr2O3/n-Si heteroeklemler üzerine etkisini incelemek amaçlanmıştır. Bu amaçla, Cr2O3 ince filmleri 40, 150 and 250 °C alttaş sıcaklıklarında radio frekansı (RF) reaktif saçtırma yöntemi ile n-Si ve cam alttaşlar üzerine büyütülmüştür. Yüksek saflıktaki Cr metali hedef ve oksijen ise reaktif gaz olarak kullanılmıştır. Cr2O3 ince filmlerin optic özellikleri uv-vis verileri ile incelenmiştir. Cr2O3/n-Si heteroeklemlerin elektriksel özellikleri karanlıkta akımgerilim (I-V) ölçümleri ile incelenmiştir. 250 °C alttaş sıcaklığında büyütülen Cr2O3 ince filmleri ile oluşturulan Cr2O3/n-Si heteroeklemin mükemmel doğrultmaya sahip olduğu görülmüştür. Bu yapının idealite faktörü, engel yüksekliği ve seri direnç gibi elektriksel özellikleri I-V verileri ile hesaplanmıştır. Işık şiddetinin bu yapının fotovoltaik parametreleri üzerin etkiside incelenmiştir. Son olarak, kapasite gerilim ölçümleri ile elde edilen engel yüksekliği değeri I-V ile elde edilen değer ile karşılaştırıldı.
The purpose of this study was to see the effects of substrate temperature on Cr2O3/n-Si heterojunctions. For this purpose Cr2O3/n-Si thin films were formed on n.Si and glass substrates at 40,150 and 250 C° by radio frequency (RF) reactive technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr2O3/n-Si thin films were analyzed using Uv-vis data . The band gaps of the films were compared. The electrical properties of Cr2O3/n-Si heterojunction were tested by their current voltage (I-V) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr2O3 thin film at 250 °C gave better rectification. The characteristics electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage (C-V) data were compared with the one calculated from I-V measurements.
The purpose of this study was to see the effects of substrate temperature on Cr2O3/n-Si heterojunctions. For this purpose Cr2O3/n-Si thin films were formed on n.Si and glass substrates at 40,150 and 250 C° by radio frequency (RF) reactive technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr2O3/n-Si thin films were analyzed using Uv-vis data . The band gaps of the films were compared. The electrical properties of Cr2O3/n-Si heterojunction were tested by their current voltage (I-V) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr2O3 thin film at 250 °C gave better rectification. The characteristics electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage (C-V) data were compared with the one calculated from I-V measurements.
Açıklama
Anahtar Kelimeler
Yoğun madde fiziği, Condensed matter physics
