A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode

Basit Öğe Kaydı
dc.contributor.authorMissoum, I.
dc.contributor.authorBenhaliliba, M.
dc.contributor.authorChaker, A.
dc.contributor.authorOcak, Y. S.
dc.contributor.authorBenouis, C. E.
dc.date.accessioned2024-04-24T16:18:24Z
dc.date.available2024-04-24T16:18:24Z
dc.date.issued2015
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe fabricated Ag/MgPc/n-GaAs/Au-Ge Schottky diode is investigated by using the electrical parameters obtained from the current-voltage (I-V) characteristics measurement at room temperature under dark and light conditions. The Cheung and Norde methods with the I-V characteristics are used to calculate and extract the Schottky diode parameters under dark and light (100 mW/cm(2)) comprising ideality factor n, barrier height (Phi(b)), series resistance (R-s) short circuit current density (J(sc)) and open circuit voltage (V-oc) are respectively found to be 3.64, 0.53 eV, 32.67 Omega, 1.129 mA/cm(2) and 0.35 V. It is seen that the value of R-s and J(sc) are low compared to the literature work which is ascribed to the configuration of Schottky diode structure such as substrate, front and back contacts. Here, we review the contribution to the understanding of magnesium phthalocyanine (MgPc) based Schottky diode for the organic microelectronics applications. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipOran University of Sciences and Technology [D01920120039]; MESRS; agence thematique de recherch en science et technologie (ATRST), [8/U311/R77, 8/U311/R81]; national administration of scientific research (NASR)en_US
dc.description.sponsorshipThis work is a part of CNEPRU project Ner D01920120039 supported by Oran University of Sciences and Technology and MESRS www.mesrs.dz. It is also included in the PNR projects under contract number 8/U311/R77 and 8/U311/R81, supported by agence thematique de recherch en science et technologie (ATRST), http://www.atrst.dz, and national administration of scientific research (NASR) http://www.dgrsdt.dz. The first authors are grateful for the assistance of virtual library of SNDL https://www.sndl.cerist.dz. We would like to thank the assistance of DUBTAM center head, Dicle University-Diyarbakir Turkey.en_US
dc.identifier.doi10.1016/j.synthmet.2015.05.027
dc.identifier.endpage45en_US
dc.identifier.issn0379-6779
dc.identifier.scopus2-s2.0-84931264988
dc.identifier.scopusqualityQ1
dc.identifier.startpage42en_US
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2015.05.027
dc.identifier.urihttps://hdl.handle.net/11468/16075
dc.identifier.volume207en_US
dc.identifier.wosWOS:000359502900007
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMagnesium Phthalocyanineen_US
dc.subjectSchottky Diodeen_US
dc.subjectSpin-Coatingen_US
dc.subjectThermal Evaporationen_US
dc.subjectN-Gaas Substrateen_US
dc.subjectCurrent-Voltage Measurementen_US
dc.titleA novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diodeen_US
dc.titleA novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu