Determination of Electrical and Photoelectrical Properties of Schottky Diodes Made Using New Chitin Derivatives Synthesized as Interface Layer

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dc.contributor.authorUzun, Ilhan
dc.contributor.authorOrak, Ikram
dc.contributor.authorYagmur, Hatice Karaer
dc.contributor.authorKarakaplan, Mehmet
dc.contributor.authorYalman, Murat
dc.date.accessioned2024-04-24T16:02:50Z
dc.date.available2024-04-24T16:02:50Z
dc.date.issued2021
dc.departmentDicle Üniversitesien_US
dc.description.abstract5-(2,4-dichlorophenyl)-2-furoic acid and anthraquinone-2-carboxylic acid were reacted separately with chitin. The synthesized products were characterized by various spectroscopic methods (FTIR, NMR and XRD) and were abbreviated as C524D2FA and CA2CA, respectively. The surface of the chitin derivatives, pulverized by pounding in mortar, was examined by SEM technique. Then, two different diodes were made by using these chitin derivatives as an interface layer. Al as metal and p-Si as semiconductor were used in the construction of the diodes. Some important properties of these diodes made were determined both in the dark and under an illumination of 100 mW/cm(2). The Al/CA2CA/p-Si diode has been found to be more ideal than the Al/C524D2FA/p-Si diode conducted in this study and many other diodes made using Al and p-Si in other studies up to now.en_US
dc.description.sponsorship[ZGEF.17.021]en_US
dc.description.sponsorshipThis study was financially supported by DuBAP with a project with number ZGEF.17.021.en_US
dc.identifier.doi10.1007/s12633-020-00779-6
dc.identifier.endpage4713en_US
dc.identifier.issn1876-990X
dc.identifier.issn1876-9918
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85093984648
dc.identifier.scopusqualityQ2
dc.identifier.startpage4703en_US
dc.identifier.urihttps://doi.org/10.1007/s12633-020-00779-6
dc.identifier.urihttps://hdl.handle.net/11468/14928
dc.identifier.volume13en_US
dc.identifier.wosWOS:000583997400001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofSilicon
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectChitinen_US
dc.subjectCarboxylic Aciden_US
dc.subjectSynthesisen_US
dc.subjectCharacterizationen_US
dc.subjectSchottky Diodeen_US
dc.subjectElectrical And Photoelectrical Propertiesen_US
dc.titleDetermination of Electrical and Photoelectrical Properties of Schottky Diodes Made Using New Chitin Derivatives Synthesized as Interface Layeren_US
dc.titleDetermination of Electrical and Photoelectrical Properties of Schottky Diodes Made Using New Chitin Derivatives Synthesized as Interface Layer
dc.typeArticleen_US

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