Electrical characterization of organic-on-inorganic semiconductor Schottky structures
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Tarih
2008
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Iop Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We prepared a methyl red/p-InP organic-inorganic (OI) Schottky device formed by evaporation of an organic compound solution directly to a p-InP semiconductor wafer. The value of the optical band gap energy of the methyl red organic film on a glass substrate was obtained as 2.0 eV. It was seen that the Al/methyl red/p-InP contacts showed a good rectifying behavior. An ideality factor of 2.02 and a barrier height (Phi(b)) of 1.11 eV for the Al/methyl red/p-InP contact were determined from the forward bias I-V characteristics. It was seen that the value of 1.11 eV obtained for Phi(b) for the Al/methyl red/p-InP contact was significantly larger than the value of 0.83 eV for conventional Al/p-InP Schottky diodes. Modification of the interfacial potential barrier for the Al/p-InP diode was achieved using a thin interlayer of the methyl red organic semiconductor. This ascribed to the fact that the methyl red interlayer increases the effective Phi(b) by influencing the space charge region of InP.
Açıklama
Anahtar Kelimeler
[No Keyword]
Kaynak
Journal of Physics-Condensed Matter
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
20
Sayı
4
