Influence of Temperature And Light Intensity on Ru(II) Complex Based Organic-Inorganic Device
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Tarih
2016
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Inst Physics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
An organic-inorganic junction was fabricated by forming [Ru(Cy2PNHCH2-C4H3O)(eta(6)-p-cymene)Cl-2] complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. It was seen that the structure had perfect rectification property. Current-voltage (I-V) measurements were carried out in dark and under various illumination conditions (between 50-100 mW/cm(2)) and with the temperature range from 303 to 380 K. The structure showed unusually forward and reverse bias temperature and light sensing behaviors. It was seen that the current both in forward and reverse bias increased with the increase in light intensity and temperature.
Açıklama
9th International Physics Conference of the Balkan-Physical-Union (BPU) -- AUG 24-27, 2015 -- Istanbul Univ, Beyazit Campus, Istanbul, TURKEY
Anahtar Kelimeler
[No Keyword]
Kaynak
9th International Physics Conference of The Balkan Physical Union (Bpu-9)
WoS Q Değeri
N/A
Scopus Q Değeri
Q4
Cilt
1722
