Improved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructure

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dc.contributor.authorCavas, M.
dc.contributor.authorAydin, M. Enver
dc.contributor.authorAl-Ghamdi, A. A.
dc.contributor.authorAl-Hartomy, Omar A.
dc.contributor.authorEl-Tantawy, Farid
dc.contributor.authorYakuphanoglu, F.
dc.date.accessioned2024-04-24T17:37:32Z
dc.date.available2024-04-24T17:37:32Z
dc.date.issued2012
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe electrical and photovoltaic properties of metal/nanostructure CuPc phtalocynine organic layer /semiconductor diode have been investigated. The diode indicated a good rectifying behavior with non-linear behavior due to the organic and inorganic interfacial layers. The barrier height (0.77 eV) and ideality factor (1.99) of the studied diode is higher than that of conventional Al/p-Si Schottky diode. This indicates that barrier height could be increased by using CuPc phtalocynine organic layer on p-type silicon by changing the space charge region of p-type silicon. The photovoltaic parameters of the diode were found to be Voc=0.25 and J(sc)=607.2 mu A under AM1.5. The obtained results indicate that the barrier height of conventional Al/p-Si Schottky diode can be increased by organic modification and metal/nanostructure CuPc/semiconductor diode can be used for optoelectronic device applications as a photosensor.en_US
dc.description.sponsorshipFirat University, Elazig, Turkey [4/1433]en_US
dc.description.sponsorshipThis study is a result of an international collaboration program between University of Tabuk, Tabuk, Saudi Arabia and Firat University, Elazig, Turkey under project no. 4/1433 and international collaboration program between teams at King Abdulaziz University and Firat University, Turkey.en_US
dc.identifier.endpage803en_US
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issue9-10en_US
dc.identifier.scopus2-s2.0-84871052378
dc.identifier.scopusqualityQ4
dc.identifier.startpage798en_US
dc.identifier.urihttps://hdl.handle.net/11468/20994
dc.identifier.volume14en_US
dc.identifier.wosWOS:000310498600016
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOrganic-Inorganic Diodesen_US
dc.subjectPhotosensoren_US
dc.subjectCupc Phtalocynineen_US
dc.titleImproved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructureen_US
dc.titleImproved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructure
dc.typeArticleen_US

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