Electronic properties of the metal/organic interlayer/inorganic semiconductor sandwich device

Basit Öğe Kaydı
dc.contributor.authorGullu, O.
dc.contributor.authorKilicoglu, T.
dc.contributor.authorTurut, A.
dc.date.accessioned2024-04-24T16:15:17Z
dc.date.available2024-04-24T16:15:17Z
dc.date.issued2010
dc.departmentDicle Üniversitesien_US
dc.description.abstractIn this study, we prepared a Metal(Al)/Organic Interlayer(Congo Red=CR)/Inorganic Semiconductor (p-Si) (MIS) Schottky device formed by coating of an organic film on p-Si semiconductor wafer. The Al/CR/p-Si MIS device had a good rectifying behavior. By using the forward bias I-V characteristics, the values of ideality factor (n) and barrier height (Phi(b)) for the Al/CR/p-Si MIS device were obtained as 1.68 and 0.77 eV, respectively. It was seen that the Phi(b) value of 0.77 eV calculated for the Al/CR/p-Si MIS device was significantly higher than value of 0.50 eV of the conventional Al/p-Si Schottky diodes. Modification of the interfacial potential barrier of the Al/p-Si diode was achieved by using a thin interlayer of the CR organic material. This was attributed to the fact that the CR organic interlayer increased the effective barrier height by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 1.24 x 10(13) to 2.44 x 10(12) eV(-1) cm(-2). (C) 2009 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.jpcs.2009.12.089
dc.identifier.endpage356en_US
dc.identifier.issn0022-3697
dc.identifier.issn1879-2553
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-76749142148
dc.identifier.scopusqualityQ1
dc.identifier.startpage351en_US
dc.identifier.urihttps://doi.org/10.1016/j.jpcs.2009.12.089
dc.identifier.urihttps://hdl.handle.net/11468/15739
dc.identifier.volume71en_US
dc.identifier.wosWOS:000276011400035
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofJournal of Physics and Chemistry of Solids
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectronic Materialsen_US
dc.subjectInterfacesen_US
dc.subjectOrganic Compoundsen_US
dc.subjectSemiconductorsen_US
dc.subjectElectrical Propertiesen_US
dc.titleElectronic properties of the metal/organic interlayer/inorganic semiconductor sandwich deviceen_US
dc.titleElectronic properties of the metal/organic interlayer/inorganic semiconductor sandwich device
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu