Annealing-induced characterization of sputtered V2O5 thin films and Ag/ V2O5/p-Si heterojunctions

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dc.contributor.authorAljawrneh, Bashar
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorAlbiss, Borhan Aldeen
dc.date.accessioned2024-04-24T16:15:46Z
dc.date.available2024-04-24T16:15:46Z
dc.date.issued2024
dc.departmentDicle Üniversitesien_US
dc.description.abstractV2O5 thin films were deposited on glass and p-type silicon substrates by radio frequency (RF) sputtering of a single V2O5 target. Half of the samples were annealed at 500 degrees C at room ambient for an hour. The morphological, structural, and optical properties of the thin films were analyzed by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-Vis data. The results showed that while the asgrown V2O5 thin films had smooth surfaces with an amorph phase, annealed films had rougher surfaces with grains in the polycrystalline phase. It is also reported that the band gap of V2O5 thin films decreased from 2.47 to 2.37 eV. Furthermore, the electrical properties of Ag/V2O5/p-Si junctions were analyzed by current-voltage (I-V) measurements. It was presented that both Ag/V2O5/p-Si structures with as-grown and annealed V2O5 thin films had exciting rectifying behaviors. It was observed that while the barrier heights of the rectifying junctions were nearly the same, the ideality factor and series resistance values of the Ag/V2O5/p-Si device fabricated by annealed V2O5 thin film were higher than the device with as grown V2O5 thin film. Finally, the photoelectrical properties of both samples were analyzed by I-V under various light intensities. It was seen that both Ag/V2O5/pSi devices had exciting photosensing behavior. While the increase in reverse bias current values with the increase in light intensity was observed for both devices, it was seen that the device obtained by as-grown thin film had much more sensitivity to light.en_US
dc.description.sponsorshipJordan University of Science and Technology (JUST) [548/2022]en_US
dc.description.sponsorshipThe authors acknowledge the financial support provided by the Jordan University of Science and Technology (JUST) through grant No. 548/2022.en_US
dc.identifier.doi10.1016/j.optmat.2023.114663
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.scopus2-s2.0-85178603119
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2023.114663
dc.identifier.urihttps://hdl.handle.net/11468/15918
dc.identifier.volume147en_US
dc.identifier.wosWOS:001133524500001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofOptical Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThin Filmsen_US
dc.subjectSputteren_US
dc.subjectAnnealingen_US
dc.subjectPhotosensingen_US
dc.titleAnnealing-induced characterization of sputtered V2O5 thin films and Ag/ V2O5/p-Si heterojunctionsen_US
dc.titleAnnealing-induced characterization of sputtered V2O5 thin films and Ag/ V2O5/p-Si heterojunctions
dc.typeArticleen_US

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