Electrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode

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dc.contributor.authorAsubay, Sezai
dc.contributor.authorGenisel, Mustafa Fatih
dc.contributor.authorOcak, Yusuf Selim
dc.date.accessioned2024-04-24T16:15:41Z
dc.date.available2024-04-24T16:15:41Z
dc.date.issued2014
dc.departmentDicle Üniversitesien_US
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYen_US
dc.description.abstractA Mo/n-type 6H-SiC/Ni Schottky barrier diode (SBD) was fabricated by sputtering Mo metal on n-type 6H-SiC semiconductor. Before the formation of Mo/n-type 6H-SiC SBD, an ohmic contact was formed by thermal evaporation of Ni on n-type 6H-SiC and annealing at 950 degrees C for 10 min. It was seen that the structure had excellent rectification. The electrical parameters were extracted using its current-voltage (I-V) and capacitance-voltage (C-V) measurements carried out at room temperature. Very high (1.10 eV) barrier height and 1.635 ideality factor values were reported for Mo/n-type 6H-SiC using In plot. The barrier height and series resistance values of the diode were also calculated as 1413 eV and 69 Omega from Norde's functions, respectively. Furthermore, 1.938 eV barrier height value of Mo/n-type 6H-SiC SBD calculated from C-V measurements was larger than the one obtained from I-V data. (C) 2014 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.mssp.2014.07.003
dc.identifier.endpage97en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84911435797
dc.identifier.scopusqualityQ1
dc.identifier.startpage94en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2014.07.003
dc.identifier.urihttps://hdl.handle.net/11468/15893
dc.identifier.volume28en_US
dc.identifier.wosWOS:000345645000017
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Barrier Diodeen_US
dc.subject6h-Sicen_US
dc.subjectBarrier Heighten_US
dc.subjectIdeality Factoren_US
dc.titleElectrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diodeen_US
dc.titleElectrical parameters of a DC sputtered Mo/n-type 6H-SiC Schottky barrier diode
dc.typeConference Objecten_US

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