Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices

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dc.contributor.authorGullu, O.
dc.contributor.authorAsubay, S.
dc.contributor.authorBiber, M.
dc.contributor.authorKilicoglu, T.
dc.contributor.authorTurut, A.
dc.date.accessioned2024-04-24T16:24:07Z
dc.date.available2024-04-24T16:24:07Z
dc.date.issued2010
dc.departmentDicle Üniversitesien_US
dc.description.abstractWe investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound solution on p-Si semiconductor substrate. It was seen that the safranine T organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights and ideality factors of all devices were extracted from the electrical characteristics. The mean barrier height and mean ideality factor from I-V measurements were calculated as 0.59 +/- 0.02 eV and 1.80 +/- 0.20, respectively. Also, the mean barrier height and mean acceptor doping concentration from C-V measurements were calculated as 0.67 +/- 0.10 eV and (6.96 +/- 0.37) x10(14) cm(-3), respectively. The discrepancy in the barrier height values obtained from I-V and C-V characteristics has been attributed to different nature of the measurements. The discrepancy between these values can also be due to the existence of the interfacial native oxide and the organic safranine T thin layer between the semiconductor substrate and top contact metal.en_US
dc.identifier.doi10.1051/epjap/2010022
dc.identifier.issn1286-0042
dc.identifier.issn1286-0050
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-77749344757
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1051/epjap/2010022
dc.identifier.urihttps://hdl.handle.net/11468/16508
dc.identifier.volume50en_US
dc.identifier.wosWOS:000275122500002
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherEdp Sciences S Aen_US
dc.relation.ispartofEuropean Physical Journal-Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword]en_US
dc.titleElectrical properties of safranine T/p-Si organic/inorganic semiconductor devicesen_US
dc.titleElectrical properties of safranine T/p-Si organic/inorganic semiconductor devices
dc.typeArticleen_US

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