The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

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dc.contributor.authorTombak, A.
dc.contributor.authorBenhaliliba, M.
dc.contributor.authorOcak, Y. S.
dc.contributor.authorKilicoglu, T.
dc.date.accessioned2024-04-24T16:18:19Z
dc.date.available2024-04-24T16:18:19Z
dc.date.issued2015
dc.departmentDicle Üniversitesien_US
dc.description.abstractIn the current paper, the physical properties and microelectronic parameters of direct current (DC) sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 degrees C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111)-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144-285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Omega cm and 0.92 to 0.06 cm(2)/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Omega respectively. (C) 2015 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).en_US
dc.identifier.doi10.1016/j.rinp.2015.11.001
dc.identifier.endpage321en_US
dc.identifier.issn2211-3797
dc.identifier.scopus2-s2.0-84947730790
dc.identifier.scopusqualityQ1
dc.identifier.startpage314en_US
dc.identifier.urihttps://doi.org/10.1016/j.rinp.2015.11.001
dc.identifier.urihttps://hdl.handle.net/11468/15993
dc.identifier.volume5en_US
dc.identifier.wosWOS:000369890700063
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofResults in Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectP-Type Cuoen_US
dc.subjectDc Sputteringen_US
dc.subjectCrystalline Structureen_US
dc.subjectOptical Propertiesen_US
dc.subjectHms Measurementen_US
dc.subjectSchottky Diodeen_US
dc.titleThe novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applicationsen_US
dc.titleThe novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications
dc.typeArticleen_US

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