The effect of native oxide layer on some electronic parameters of Au/n-Si/Au-Sb Schottky barrier diodes

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dc.contributor.authorKiliçoglu, T
dc.contributor.authorAsubay, S
dc.date.accessioned2024-04-24T16:15:49Z
dc.date.available2024-04-24T16:15:49Z
dc.date.issued2005
dc.departmentDicle Üniversitesien_US
dc.description.abstractWe have fabricated Au/n-Si Schottky barrier diodes (SBDs) with and without thin native oxide layer to explain whether or not the native oxide layer is effective on some electronic parameters such as ideality factor, barrier height (BH), series resistance, interface state density and rectifying ratio. The native oxide layer on Si surface cleaned using RCA cleaning procedure was obtained by exposing the Si surface to clean room air for 10 h, before metal evaporation. We calculated electronic parameters of these two diodes and compared them. The values of 1.04 and 0.742eV for ideality factor and BH of the reference sample, respectively, and the values of 1.15 and 0.743 eV for the ideality factor and BH of Au/native oxide/n-Si, respectively, were obtained. The values of all electronic parameters of Au/native oxide/ n-Si metal-insulator-semiconductor (MIS) SBDs except for the rectifying ratio have been found to be higher than values of the reference sample (MS). (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physb.2005.06.036
dc.identifier.endpage63en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue1-4en_US
dc.identifier.scopus2-s2.0-26444455602
dc.identifier.scopusqualityQ2
dc.identifier.startpage58en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2005.06.036
dc.identifier.urihttps://hdl.handle.net/11468/15937
dc.identifier.volume368en_US
dc.identifier.wosWOS:000232959400009
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky Barrieren_US
dc.subjectSeries Resistanceen_US
dc.subjectInterfacial Layeren_US
dc.subjectInterface State Densityen_US
dc.subjectOhmic Contacten_US
dc.subjectSiliconen_US
dc.titleThe effect of native oxide layer on some electronic parameters of Au/n-Si/Au-Sb Schottky barrier diodesen_US
dc.titleThe effect of native oxide layer on some electronic parameters of Au/n-Si/Au-Sb Schottky barrier diodes
dc.typeArticleen_US

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