CO2 sensing behavior of vertically aligned Si Nanowire/ZnO structures

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dc.authorid0000-0001-8754-1720en_US
dc.contributor.authorOcak, Yusuf Selim
dc.contributor.authorLamri Zeggar, Meryem
dc.contributor.authorGenisel, Mustafa Fatih
dc.contributor.authorUzun, Nilufer Uslu
dc.contributor.authorAida, Mohammed Salah
dc.date.accessioned2022-12-08T12:44:51Z
dc.date.available2022-12-08T12:44:51Z
dc.date.issued2021en_US
dc.departmentDicle Üniversitesi, Ziya Gökalp Eğitim Fakültesi, Matematik ve Fen Bilimleri Eğitimi Bölümüen_US
dc.description.abstractMetal oxide nanostructures are highly attractive for the fabrication of gas sensors due to their high surface-to-volume ratios. The design of novel structures has great importance to improve sensing behavior. Atomic layer deposited ZnO thin film on vertically aligned silicon nanowire (Si NW) arrays were used to understand the influence of etching time on CO2 sensing behavior of the SiNW/ZnO structure. The metal-assisted chemical etching method was used to realize SiNW arrays. The etching processes were performed for 5, 10, 30, and 60 min. The linear relationship between etching time and Si NW length was reported. 30 nm ZnO thin films were deposited on Si NWs by atomic layer deposition (ALD) method using diethyl Zinc and H2O as Zn and O-2 sources, respectively. The CO2 sensing properties of the SiNW/ZnO structures were examined at ambient temperature and low CO2 concentration. The testing measurement results reveal that the sensor realized on un-etched Si does not exhibit any sensitivity. While the SiNW/ZnO was sensitive to CO2, the sensor sensitivity increase with the etching time due to the increase in the specific reactive surface. Moreover, the realized sensors have a relatively low response and recovery times, in the range of 2-7 s, by comparison to the reported ones in the literature.en_US
dc.identifier.citationOcak, Y.S., Zeggar, M.L., Genisel, M.F., Uzun, N.U. ve Aida, M.S. (2021). CO2 sensing behavior of vertically aligned Si Nanowire/ZnO structures. Materials Science in Semiconductor Processing, 134, 1-6.en_US
dc.identifier.doi10.1016/j.mssp.2021.106028
dc.identifier.endpage6en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85108274287
dc.identifier.scopusqualityQ1
dc.identifier.startpage1en_US
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1369800121003747?via%3Dihub
dc.identifier.urihttps://hdl.handle.net/11468/10985
dc.identifier.volume134en_US
dc.identifier.wosWOS:000683552800006
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorOcak, Yusuf Selim
dc.institutionauthorUzun, Nilüfer Uslu
dc.language.isoenen_US
dc.publisherElsevier SCI LTD.en_US
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSilicon nanowireen_US
dc.subjectAtomic layer depositionen_US
dc.subjectZnOen_US
dc.subjectGas sensingen_US
dc.titleCO2 sensing behavior of vertically aligned Si Nanowire/ZnO structuresen_US
dc.titleCO2 sensing behavior of vertically aligned Si Nanowire/ZnO structures
dc.typeArticleen_US

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