Effect of Light Intensity and Temperature on the Current Voltage Characteristics of Al/SY/p-Si Organic-Inorganic Heterojunction

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dc.contributor.authorImer, Arife Gencer
dc.contributor.authorOcak, Yusuf Selim
dc.date.accessioned2024-04-24T16:02:30Z
dc.date.available2024-04-24T16:02:30Z
dc.date.issued2016
dc.departmentDicle Üniversitesien_US
dc.description.abstractAn organic-inorganic contact was fabricated by forming a thin film of sunset yellow dye (SY) on a p-Si wafer. The device showed a good rectification property, and the sunset yellow thin film modified the barrier height (Ub) of Al/p-Si contact by influencing the space charge region. The heterojunction had a strong response to the different illumination intensities and showed that it can be suitable for photodiode applications. The I-V measurements of the device were also applied in the temperature range of 100-500 K. It was seen that characteristic parameters of the device were strongly dependent upon temperature. While the value of Ub increased, the ideality factor (n) decreased with the increase in temperature. This variation was attributed to spatial inhomogeneity at the interface. The Norde function was used to determine the temperature-dependent series resistance and Ub values, and there was a good agreement with that of ln I-V data. The values of the Richardson constant (A*) and mean Ub were determined as 29.47 A cm(-2) K-2 by means of a modified activation energy plot, matching with a theoretical one, and 1.032 eV, respectively. Therefore, it was stated that the current voltage characteristic with the temperature can be explained by thermionic emission theory with Gaussian distribution of the Ub at the interface.en_US
dc.description.sponsorshipYuzuncu Yil Scientific Research management (YYU-BAPB) projects [2012-FED-B007, 2015-FBE-YL347]; Science and Technology Application and Research Center in Dicle University (DUBTAM)en_US
dc.description.sponsorshipThis work has been partially supported by Yuzuncu Yil Scientific Research management (YYU-BAPB) projects under the Contract 2012-FED-B007 and 2015-FBE-YL347. We would like to also thank the Science and Technology Application and Research Center in Dicle University (DUBTAM) for their support.en_US
dc.identifier.doi10.1007/s11664-016-4649-4
dc.identifier.endpage5355en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-84973165082
dc.identifier.scopusqualityQ2
dc.identifier.startpage5347en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-016-4649-4
dc.identifier.urihttps://hdl.handle.net/11468/14815
dc.identifier.volume45en_US
dc.identifier.wosWOS:000382585400081
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Electronic Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOrganic Materialsen_US
dc.subjectHeterojunctionen_US
dc.subjectLighten_US
dc.subjectTemperature Effecten_US
dc.titleEffect of Light Intensity and Temperature on the Current Voltage Characteristics of Al/SY/p-Si Organic-Inorganic Heterojunctionen_US
dc.titleEffect of Light Intensity and Temperature on the Current Voltage Characteristics of Al/SY/p-Si Organic-Inorganic Heterojunction
dc.typeArticleen_US

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