Characterization of an Au/n-Si photovoltaic structure with an organic thin film

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dc.contributor.authorOzaydin, C.
dc.contributor.authorAkkilic, K.
dc.contributor.authorIlhan, S.
dc.contributor.authorRuzgar, S.
dc.contributor.authorGullu, O.
dc.contributor.authorTemel, H.
dc.date.accessioned2024-04-24T16:15:40Z
dc.date.available2024-04-24T16:15:40Z
dc.date.issued2013
dc.departmentDicle Üniversitesien_US
dc.description.abstractWe demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Phi(b) of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 k Omega and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 mu A under light of 8 mW/cm(2). (C) 2013 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipTurkish of Prime Ministry State Planning Organization (DPT) [2010BKV1285]; Dicle University [DUBAP 10-ZEF-126]en_US
dc.description.sponsorshipThis work is partly supported by Turkish of Prime Ministry State Planning Organization (DPT) (Project number: 2010BKV1285, Project Title: Batman Universitesi Merkezi Laboratuvarinin Kurulmasi) and Dicle University Research Project Found (Project number: DUBAP 10-ZEF-126).en_US
dc.identifier.doi10.1016/j.mssp.2013.03.002
dc.identifier.endpage1130en_US
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.issue4en_US
dc.identifier.scopus2-s2.0-84878856140
dc.identifier.scopusqualityQ1
dc.identifier.startpage1125en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2013.03.002
dc.identifier.urihttps://hdl.handle.net/11468/15890
dc.identifier.volume16en_US
dc.identifier.wosWOS:000321087600011
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDevicesen_US
dc.subjectSchottky Barrieren_US
dc.subjectOrganicsen_US
dc.subjectSurfaces And Interfacesen_US
dc.titleCharacterization of an Au/n-Si photovoltaic structure with an organic thin filmen_US
dc.titleCharacterization of an Au/n-Si photovoltaic structure with an organic thin film
dc.typeArticleen_US

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