Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer

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dc.contributor.authorAydin, Mehmet Enver
dc.contributor.authorSoylu, Murat
dc.contributor.authorYakuphanoglu, Fahrettin
dc.contributor.authorFarooq, W. A.
dc.date.accessioned2024-04-24T16:15:28Z
dc.date.available2024-04-24T16:15:28Z
dc.date.issued2011
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe electronic properties of metal-organic semiconductor-inorganic semiconductor structure between GaAs and poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic film have been investigated via current-voltage and capacitance-voltage methods. The Au/PEDOT/n-GaAs contact exhibits a rectification behavior with the barrier height of 0.69 eV and ideality factor value of 3.94. The barrier height of the studied diode (0.67 eV) is lower than that of Ni/n-GaAs/In (0.85 eV) and Au/n-GaAs/In Schottky diodes. The decrease in barrier height of Au/n-GaAs/In Schottky diode is likely to be due to the variation in the space charge region in the GaAs. The obtained results indicate that control of the interfacial potential barrier for metal/n-GaAs diode was achieved using thin interlayer of the poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol). (c) 2010 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipFeyzi AKKAYA Scientific Activates Supporting Fund (FABED); DUBAP in Dicle University [DUBAP-06-FF-83]; King Saud University (KSU) [KSU-VPP-102]en_US
dc.description.sponsorshipThis work was supported by Feyzi AKKAYA Scientific Activates Supporting Fund (FABED), DUBAP in Dicle University with DUBAP-06-FF-83 number project and King Saud University (KSU) under grant: KSU-VPP-102. One of author wishes to thank KSU and FABED for young scientist grant.en_US
dc.identifier.doi10.1016/j.mee.2010.11.012
dc.identifier.endpage871en_US
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-79952438701
dc.identifier.scopusqualityQ2
dc.identifier.startpage867en_US
dc.identifier.urihttps://doi.org/10.1016/j.mee.2010.11.012
dc.identifier.urihttps://hdl.handle.net/11468/15817
dc.identifier.volume88en_US
dc.identifier.wosWOS:000289186500004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOrganic Semiconductor/Inorganicen_US
dc.subjectSemiconductor Contactsen_US
dc.subjectHetero-Junctionen_US
dc.subjectSchottky Barrier Diodesen_US
dc.titleControlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayeren_US
dc.titleControlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer
dc.typeArticleen_US

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