Electrical and photovoltaic properties of a n-Si/chitosan/Ag photodiode

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dc.contributor.authorAkkilic, Kernal
dc.contributor.authorYakuphanoglu, Fahrettin
dc.date.accessioned2024-04-24T16:15:28Z
dc.date.available2024-04-24T16:15:28Z
dc.date.issued2008
dc.departmentDicle Üniversitesien_US
dc.description.abstractThe electrical and photovoltaic properties of AuSb/n-Si/chitosan/Ag diode have been investigated. The ideality factor, barrier height and Richardson constant values of the diode at room temperature were found to be 1.91, 0.88 eV and 121.4 A/cm(2) K-2, respectively. The ideality factor of the diode is higher than unity, suggesting that the diode shows a non-ideal behaviour due to series resistance and barrier height inhomogeneities. The barrier height and ideality factor values of Ag/CHT/n-Si diode at room temperature are significantly larger than that of the conventional Ag/n-Si Schottky diode. The phi(B) value obtained from C-V measurement is higher than that of phi(B) value obtained from I-V measurement. The discrepancy between phi(B)(C-V) and phi(B)(I-V) barrier height values can be explained by Schottky barrier height inhomogeneities. AuSb/n-Si/chitosan/Ag diode indicates a photovoltaic behaviour with open circuit voltage (V-oc = 0.23 V) and short-circuit current density (I-sc = 0.10 mu A/cm(-2)) values. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTurkish Scientific and Technological Research Council of Turkey (Tubitak) [105T137]en_US
dc.description.sponsorshipThis work was supported by the Turkish Scientific and Technological Research Council of Turkey (Tubitak) (Project No. 105T137). Authors thank The Scientific and Technological Research Council of Turkey.en_US
dc.identifier.doi10.1016/j.mee.2008.05.015
dc.identifier.endpage1830en_US
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-48949115573
dc.identifier.scopusqualityQ2
dc.identifier.startpage1826en_US
dc.identifier.urihttps://doi.org/10.1016/j.mee.2008.05.015
dc.identifier.urihttps://hdl.handle.net/11468/15812
dc.identifier.volume85en_US
dc.identifier.wosWOS:000258714000029
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOrganic Semiconductoren_US
dc.subjectPhotovoltaic Behaviouren_US
dc.subjectBarrier Height Inhomogeneityen_US
dc.titleElectrical and photovoltaic properties of a n-Si/chitosan/Ag photodiodeen_US
dc.titleElectrical and photovoltaic properties of a n-Si/chitosan/Ag photodiode
dc.typeArticleen_US

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