EFFECT OF WATER RATIO OF ELECTROLYTE ON THE PROPERTIES OF SI/ANODIC OXIDE INTERFACES

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dc.contributor.authorKILICOGLU, T
dc.contributor.authorOZTURK, ZZ
dc.contributor.authorEBEOGLU, MA
dc.contributor.authorGULSUN, Z
dc.date.accessioned2024-04-24T17:40:15Z
dc.date.available2024-04-24T17:40:15Z
dc.date.issued1993
dc.departmentDicle Üniversitesien_US
dc.description.abstractIn order to study the effect of water ratio on the properties of Si/anodic oxide (AO) interface, metal-oxide-semiconductor capacitors have been used. Anodic oxide films were grown under constant current conditions by using 0.034 M NH4NO3, solution in methanol and its solutions diluted with deionized water of 2 and 10 per cent. The small signal capacitance and conductance of MOS were measured as a function of the bias at both room temperature and at 77 K. The analysis of the C-V curves showed a maximum of interface states of different values in lower-half of the band gap at room temperature, while this maximum was missing at 77 K. This maximum may be due to the unsaturated dangling bonds of the interfaces.en_US
dc.identifier.endpage720en_US
dc.identifier.issn0019-5596
dc.identifier.issue10en_US
dc.identifier.startpage718en_US
dc.identifier.urihttps://hdl.handle.net/11468/21709
dc.identifier.volume31en_US
dc.identifier.wosWOS:A1993MC90600007
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.language.isoenen_US
dc.publisherCouncil Scientific Industrial Researchen_US
dc.relation.ispartofIndian Journal of Pure & Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword]en_US
dc.titleEFFECT OF WATER RATIO OF ELECTROLYTE ON THE PROPERTIES OF SI/ANODIC OXIDE INTERFACESen_US
dc.titleEFFECT OF WATER RATIO OF ELECTROLYTE ON THE PROPERTIES OF SI/ANODIC OXIDE INTERFACES
dc.typeArticleen_US

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