EFFECT OF WATER RATIO OF ELECTROLYTE ON THE PROPERTIES OF SI/ANODIC OXIDE INTERFACES
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Tarih
1993
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Council Scientific Industrial Research
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In order to study the effect of water ratio on the properties of Si/anodic oxide (AO) interface, metal-oxide-semiconductor capacitors have been used. Anodic oxide films were grown under constant current conditions by using 0.034 M NH4NO3, solution in methanol and its solutions diluted with deionized water of 2 and 10 per cent. The small signal capacitance and conductance of MOS were measured as a function of the bias at both room temperature and at 77 K. The analysis of the C-V curves showed a maximum of interface states of different values in lower-half of the band gap at room temperature, while this maximum was missing at 77 K. This maximum may be due to the unsaturated dangling bonds of the interfaces.
Açıklama
Anahtar Kelimeler
[No Keyword]
Kaynak
Indian Journal of Pure & Applied Physics
WoS Q Değeri
N/A
Scopus Q Değeri
Cilt
31
Sayı
10
