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Öğe Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes(Pergamon-Elsevier Science Ltd, 2003) Akkiliç, K; Türüt, A; Çankaya, G; Kiliçoglu, TOur goal is to experimentally investigate whether or not the effective Schottky barrier heights (SBHs) and ideality factors obtained from the current-voltage (I-V) and capacitance -voltage (C-V) characteristics differ from diode to diode even if the samples were identically prepared. For this purpose, we prepared Cd/n-Si (33 dots) and Cd/p-Si (15 dots) diodes. The SBH for the Cd/n-Si diodes ranged from 0.701 to 0.605 eV, and ideality factor n from 1.913 to 1.213. Phi(b) value for the Cd/p-Si diodes ranged from 0.688 to 0.730 eV, and ideality factor n value from 1.473 to 1.040. The experimental SBH distributions obtained from the C-2-V and I-V characteristics were fitted by a Gaussian function and their mean SBH values were calculated. Furthermore, the laterally homogeneous barrier heights were also computed from the extrapolation of the linear plot of experimental barrier heights versus ideality factors. (C) 2003 Elsevier Science Ltd. All rights reserved.Öğe The effect of series resistance on the relationship between barrier heights and ideality factors of inhomogeneous Schottky barrier diodes(Royal Swedish Acad Sciences, 2004) Akkiliç, K; Aydin, ME; Türüt, AWe have studied Cd/n-Si (33 dots) Schottky barrier diodes (SBDs). Si surfaces have been prepared by the usual chemical etching. and the evaporation of metal has been carried out in a conventional vacuum system. The effective Schottky barrier heights (SBHs) and ideality factors obtained from the current-voltage (I-V) characteristics differ from diode to diode although the samples were identically prepared. The SBH for the Cd/n-Si diodes ranged from 0.605 eV to 0.701 eV. and ideality factor n from 1.213 to 1.913. The reason for that the experimental data differ from diode to diode has been analyzed by applying thermionic emission theory (TET) of inhomogeneous Schottky contacts together with standard TET and thus the effect of series resistance on the relationship between barrier heights and ideality factors of the inhomogeneous SBDs has clearly been shown. A laterally homogeneous SBH value of approximately 0.770eV for Cd/n-Si SDs has been obtained by the barrier inhomogeneity model.Öğe Linear correlation between barrier heights and ideality factors of Sn/n-Si schottky diodes with and without the interfacial native oxide layer(Elsevier, 2003) Akkiliç, K; Kiliçoglu, T; Türüt, AWe have prepared the Sn/n-Si Schottky barrier diodes (SBDs) with and without the native oxide layer. The diodes with or without the native oxide layer have been identically fabricated on the same Si wafer. The effective Schottky barrier heights (SBHs) and ideality factors of the SBDs have been obtained from the current-voltage (I-P) characteristics. Our purpose is experimentally to show whether or not the effective SBHs and ideality factors of the identically fabricated diodes differ from diode to diode. The SBH Phi(b) for the Sn/n-Si SBI)s without the interfacial oxide layer (the reference sample) has ranged from 0.670 to 0.599 eV, and ideality factor n from 1.349 to 2.558. Phi(b) value for the Sn/n-Si SBDs with the interfacial oxide layer (metal interfacial layer-semiconductor (MIS) sample) has ranged from 0.647 to 0.560eV, and ideality factor n value from 1.381 to 2.777. Among identically prepared diodes, higher ideality factors have been found to accompany lower SBHs. Furthermore, the extrapolations of the linear plot the experimental barrier heights (BHs) versus ideality factors to the ideality factor have given the laterally homogeneous BHs of approximately 0.683 and 0.656eV for the reference and MIS Sn/n-Si SBDs. (C) 2003 Elsevier B.V. All rights reserved.
