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    Electrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayer
    (Elsevier Science Sa, 2015) Ozerden, Enise; Ocak, Yusuf Selim; Tombak, Ahmet; Kilicoglu, Tahsin; Turut, Abdulmecit
    Electrical and photoelectrical features of Metal/Organic Interlayer/Inorganic Semiconductor (MIS) Schottky device were investigated by using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. For this purpose, 9,10-dihydrobenzo[a]pyrene-7(8H)-one (9,10-H2BaP) thin film was used as organic interlayer between Ag metal and n-Si semiconductor. Firstly, optical properties of the organic thin film were determined from optical absorption spectrum, and its optical band gap was found to be 3.73 eV. Then, the electrical parameters of the Ag/9,10-H2BaP/n-Si diode such as ideality factor (n), barrier height (Phi(b(I-V))), diffusion potential (V-d), barrier height (Phi(b(C-V))) and carrier concentration (N-d) were calculated from I-V and C-V characteristics at room temperature. The Fb values obtained from both measurements were compared with each other. Besides, the effect of light on I-V measurements of the structure was examined at illumination intensities ranging from 40 to 100 mW/cm(2) with 20 mW/cm(2) intervals using a solar simulator with AM1.5 filter. Light sensitivity, open circuit voltage (V-OC) and short circuit current (I-SC) parameters of Ag/9,10-H2BaP/n-Si structure were calculated from under light measurements. (C) 2015 Elsevier B.V. All rights reserved.
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    An organic-inorganic rectifying contact based on a ZnPc derivative
    (Elsevier Sci Ltd, 2014) Ozerden, Enise; Yildiz, Mustafa; Ocak, Yusuf Selim; Tombak, Ahmet; Kilicoglu, Tahsin
    An organic-inorganic rectifying contact was fabricated by forming a thin film of a Zinc Phthalocyanine (ZnPc) derivative, Zinc 2,3,9,10,16,17,23,24-octakis(octyloxy)-29H, 31H-phthalocyanine (oc-ZnPc), on a p-Si wafer and evaporating Al on the structure. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of Al/oc-ZnPc/p-Si structure were taken in dark at room temperature. The I-V measurements proved that the structure showed excellent rectification. Some basic diode parameters like ideality factor and barrier height were calculated from lnI-V plot. Ideality factor and barrier height values were found as 144 and 0.78 eV, respectively. The series resistance value of the structure was determined as 5.46 k Omega by means of Norde functions. The C-V measurements were taken for various frequencies and it was seen that the capacitance value decreased with increasing frequency. In addition I-V measurements of the Al/oc-ZaPc/p-Si/Al were repeated under light which had illumination intensity of 40-100 mW/cm(2). It was observed that reverse bias current of the diode increased with the light intensity. Therefore, the structure showed photodiode characteristics and it can be used for electrical and optoelectronic applications. (C) 2014 Elsevier Ltd. All rights reserved.