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Öğe Correlation between barrier heights and ideality factors of Cd/n-Si and Cd/p-Si Schottky barrier diodes(Pergamon-Elsevier Science Ltd, 2003) Akkiliç, K; Türüt, A; Çankaya, G; Kiliçoglu, TOur goal is to experimentally investigate whether or not the effective Schottky barrier heights (SBHs) and ideality factors obtained from the current-voltage (I-V) and capacitance -voltage (C-V) characteristics differ from diode to diode even if the samples were identically prepared. For this purpose, we prepared Cd/n-Si (33 dots) and Cd/p-Si (15 dots) diodes. The SBH for the Cd/n-Si diodes ranged from 0.701 to 0.605 eV, and ideality factor n from 1.913 to 1.213. Phi(b) value for the Cd/p-Si diodes ranged from 0.688 to 0.730 eV, and ideality factor n value from 1.473 to 1.040. The experimental SBH distributions obtained from the C-2-V and I-V characteristics were fitted by a Gaussian function and their mean SBH values were calculated. Furthermore, the laterally homogeneous barrier heights were also computed from the extrapolation of the linear plot of experimental barrier heights versus ideality factors. (C) 2003 Elsevier Science Ltd. All rights reserved.Öğe The effect of native oxide layer on some electronic parameters of Au/n-Si/Au-Sb Schottky barrier diodes(Elsevier Science Bv, 2005) Kiliçoglu, T; Asubay, SWe have fabricated Au/n-Si Schottky barrier diodes (SBDs) with and without thin native oxide layer to explain whether or not the native oxide layer is effective on some electronic parameters such as ideality factor, barrier height (BH), series resistance, interface state density and rectifying ratio. The native oxide layer on Si surface cleaned using RCA cleaning procedure was obtained by exposing the Si surface to clean room air for 10 h, before metal evaporation. We calculated electronic parameters of these two diodes and compared them. The values of 1.04 and 0.742eV for ideality factor and BH of the reference sample, respectively, and the values of 1.15 and 0.743 eV for the ideality factor and BH of Au/native oxide/n-Si, respectively, were obtained. The values of all electronic parameters of Au/native oxide/ n-Si metal-insulator-semiconductor (MIS) SBDs except for the rectifying ratio have been found to be higher than values of the reference sample (MS). (c) 2005 Elsevier B.V. All rights reserved.Öğe Linear correlation between barrier heights and ideality factors of Sn/n-Si schottky diodes with and without the interfacial native oxide layer(Elsevier, 2003) Akkiliç, K; Kiliçoglu, T; Türüt, AWe have prepared the Sn/n-Si Schottky barrier diodes (SBDs) with and without the native oxide layer. The diodes with or without the native oxide layer have been identically fabricated on the same Si wafer. The effective Schottky barrier heights (SBHs) and ideality factors of the SBDs have been obtained from the current-voltage (I-P) characteristics. Our purpose is experimentally to show whether or not the effective SBHs and ideality factors of the identically fabricated diodes differ from diode to diode. The SBH Phi(b) for the Sn/n-Si SBI)s without the interfacial oxide layer (the reference sample) has ranged from 0.670 to 0.599 eV, and ideality factor n from 1.349 to 2.558. Phi(b) value for the Sn/n-Si SBDs with the interfacial oxide layer (metal interfacial layer-semiconductor (MIS) sample) has ranged from 0.647 to 0.560eV, and ideality factor n value from 1.381 to 2.777. Among identically prepared diodes, higher ideality factors have been found to accompany lower SBHs. Furthermore, the extrapolations of the linear plot the experimental barrier heights (BHs) versus ideality factors to the ideality factor have given the laterally homogeneous BHs of approximately 0.683 and 0.656eV for the reference and MIS Sn/n-Si SBDs. (C) 2003 Elsevier B.V. All rights reserved.Öğe Relationship between barrier heights and ideality factors of H-terminated Pb/p-Si contacts with and without the interfacial oxide layer(Elsevier Science Bv, 2004) Aydin, ME; Akkiliç, K; Kiliçoglu, TWe have fabricated H-terminated Pb/p-type Si Schottky contacts with and without the native oxide layer to explain the difference between their barrier height values. It has been experimentally seen that the effective barrier heights (BHs) and ideality factor of identically fabricated diodes varied from diode to diode, and that there is a linear relationship between experimentally effective BHs and ideality factors of Schottky contacts that may be attributed to lateral inhomogeneities of the BHs. The BH value for the Pb/p-Si contacts without the interfacial oxide layer (MS sample) has ranged from 0.741 to 0.765 eV, and the ideality factor n from 1.001 to 1.040. The 1311 value for the Pb/p-Si contacts with the interfacial oxide layer (MIS sample) has ranged from 0.746 to 0.779 eV, and the ideality factor n value from 1.035 to 1.124. Furthermore, the extrapolations of the linear plot of the experimental BHs versus ideality factors have given laterally homogeneous barrier height values approximately 0.757 and 0.769 eV for the MS and MIS Pb/p-Si contacts, respectively. (C) 2003 Elsevier B.V. All rights reserved.
