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Öğe Electrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer(Springer, 2023) Obaid, Masoud Giyathaddin; Ocak, Yusuf Selim; Albiss, Borhan Aldeen; Benhaliliba, MostefaZrO2 thin films were deposited on n-Si and quartz substrates by a reactive sputtering technique. The morphological and optical characterization of a sputtered ZrO2 thin film revealed a highly smooth surface with 1.5 nm roughness and optical band gap value of 5.7 eV. An Au/ZrO2/n-Si metal–insulator-semiconductor (MIS) structure was obtained by evaporation of the Au on ZrO2/n-Si structure. The electrical properties analyzed by current–voltage (I-V) measurements in the dark showed that the device had 5. 094 ideality factor, 0.808 eV barrier height, and 50 Ω series resistance values. The C-V measurements showed that the device could not follow the AC signals at higher frequencies owing to the interface states, and the barrier height value calculated using C-V data (0.916 eV) is higher than the one obtained from the I-V plot. The photoelectrical parameters were determined by I-V measurements at various light intensities. The findings proved that the photoelectrical parameters of the MIS device had a photosensing behavior.Öğe An experimental insight into the ZnO thin films properties prepared by dip coating technique(Sumy State University, 2016) Benhaliliba, Mostefa; Ocak, Yusuf SelimThe physical properties of the pure and metal doped ZnO films are investigated using a low cost dip coating technique. The films have grown slowly onto a glass substrate at room temperature. Based on Xray pattern parameters are extracted such as grain size, lattice parameters. Optical measurements within the UV-Vis band give us the transmittance of films (> 80 %) and optical band gap. Using the Hall Effect measurement (HMS) in room temperature, we determine the bulk density of charge carriers, mobility and their electrical resistivity.Öğe The inventive manufacturing and characterization of Au/BG/p-Si/Al devices for solar cell applications(Springer Science and Business Media Deutschland GmbH, 2024) Benhaliliba, Mostefa; Ocak, Yusuf SelimNovel dye brilliant green (BG) based devices are fabricated using a low–cost spin coating process on a p–type silicon substrate. The front gold contact is deposited onto the BG film at a high vacuum. The current–voltage measurements in the dark and under various light intensities at room temperature are performed. Experimental data are exploited, and electrical parameters are extracted to describe a non–ideal diode behavior of the BG–based device. The Cheung and Norde approximations and thermionic emission theory are utilized to extract the suitable electrical parameters, including ideality factor (n), barrier height (Φb), series resistance (RS), open-circuit voltage (VOC), short circuit current (ISC), and interface state density (Dit). The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of Au/BG/p–Si/Alheterostructure are described in the dark and room temperature. Furthermore, the influence of the resistance series and the interface states on the operation of the diodes in the dark and illumination modes is also emphasized.Öğe Investigation of ZnO nanostructures: Effect of metal and spinning speed on the physical properties(Inderscience Publishers, 2013) Benhaliliba, Mostefa; Benouis, Chahinez E.; Aida, M. S.; Ocak, Yusuf Selim; Yakuphanoǧlu, FahrettinIn this current work, we report on the surface morphology of pure (ZnO) and metal doped (MZO, M = Cu, Fe and Cd) zinc oxide nanostructures grown by sol-gel spin coating route onto a glass substrate at room temperature and speed of 1,000 rpm. We also investigate the effect of spinning speed on the physical and surface properties of coated ZnO films. The doping ratios Cu/Zn, Fe/Zn, Cd/Zn were kept at 2% in the solution. Atomic force microscope (AFM) revealed that nano-grains change in shape and growth orientation as a result of metal content. Average of grains sizes were found to be 87, 122, 174 and 260 nm respectively for pure, Cu, Fe and Cd doped ZnO. Based on the histogram profile, the shape looks like Gaussian curve for the pure ZnO, and it changes considerably for the M-doped ZnO films. Parameters of surface are investigated such as distribution of heights, power spectrum density (Psd), Fourier transform (Ft) of the picture and surface roughness (Rms). Spinning speed influences the surface and physical properties of coated ZnO films. The optimum results, high transparency (?72%) and low resistivity (9 k?cm), have been obtained with an increase in speed.Öğe The nanostructure based SnS chalcogenide semiconductor: A detailed investigation of physical and electrical properties(Budapest University of Technology and Economics, 2024) Benhaliliba, Mostefa; Ayeshamariam, Abbas; Ocak, Yusuf SelimIn this research, we fabricate SnS films using a low-cost spray pyrolysis technique. Several parameters such as grain size, textural coefficient, Sn concentration, root mean square (RMS), optical band gap, Urbach and dispersion energy are determined by the mean of X-ray diffraction pattern, UV-Vis measurements, surface morphology observation by scanning electron microscopy (SEM)-energy dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), selective area electron diffraction (SAED) and atomic force microscopy (AFM). Furthermore, SnS thin films exhibit a polycrystalline structure having a low grain size of 6.1 nm along principal (111) orientation. The optical band gap is around 1.9 eV and Urbach energy is of 740 meV. The dielectric parameters of chalcogenide SnS thin film are varying with photon energy within ultraviolet-visible-infrared (Uv-Vis-IR) bands. Besides, the single oscillator E0 and Ed energies are found to be 2.03 and 3.28 eV, respectively, using the Wemple and DiDomenico (WDD) model. Electrical measurements of SnS thin films deposited onto Indium Tin Oxide (ITO) substrate are accomplished and current-voltage (I–V) characteristics of SnO2 / SnS/ITO, are shaped in dark and room temperature conditions. Photovoltaic parameters like open circuit voltage (Voc), short circuit current (Isc), fill factor (FF) and power conversion efficiency (η) values are determined and SnO2 / SnS/ITO junction records the highest values.Öğe Nanostructured device based on coated ZnO layer as a window in solar cell applications(Sciendo, 2018) Mokhtari, Hossein; Benhaliliba, Mostefa; Boukhachem, A.; Aida, M. S.; Ocak, Yusuf SelimThis work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5 °C. For the as-grown layers, M- to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coeffi-cient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E 0 as well as dispersion energy E d were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.
