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    Conversion from p- to n-Type Conductivity in CuO Thin Films Through Zr Doping
    (Springer, 2022) Baturay, Silan
    CuO films with Zr doping were successfully fabricated on substrates of soda-lime glass (SLG) using a spin-coating method at various doping concentrations. X-ray diffraction (XRD) patterns for pure and Zr-doped CuO thin films indicated that all thin CuO films have a monoclinic polycrystalline nature, with two maximum peaks (-111) and (111). The dislocation density values of the (-111) and (111) planes are increased from 13.4 x 10(14) to 34.9 x 10(14) m(-2) and from 26 x 10(14) to 42.7 x 10(14) m(-2), respectively, owing to the expansion of structural parameters with Zr dopant content. Scanning electron microscopy (SEM) indicated nanostructure particles uniformly distributed on all thin-film surfaces without any agglomerated nanostructure particles. The thickness of CuO films in conjunction with Zr doping is approximately 460 nm. The EDX spectrum of pure CuO in thin film contains Cu and O elements; 1%, 2%, and 3% Zr-doped CuO thin films contain Zr, Cu, and O elements, as expected. Atomic force microscopy (AFM) figures indicate that the surface topologies of thin films are uniformly distributed. Ultraviolet-visible spectroscopy (UV-Vis) measurements of the thin films revealed that the transmittance increased from 25% to 45% in the visible range with increasing Zr concentration at room temperature. The energy band gap increased from 1.67 to 2.03 eV with increasing Zr concentration. At room temperature, a Hall effect system was used to investigate the electrical parameters, including carrier concentration, resistivity, conductivity type, and hole mobility of the CuO films with Zr doping. Conductivity type conversion was observed with 2% and 3% Zr-doped CuO, and confirmed by capacity-voltage (C-V) measurements. The charge-carrier concentration of the samples ranged from 1.08 x 10(16) to 5.06 x 10(18) cm(-3) with Zr doping. Thus, the optical and electrical properties of CuO thin film such as the band gap energy, transmittance, and carrier mobility can be modified.
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    The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions
    (Elsevier Science Sa, 2015) Baturay, Silan; Ocak, Yusuf Selim; Kaya, Derya
    Undoped ZnO thin films, as well as 1%, 3% and 5% Gd-doped ZnO films, were deposited on p-type Si using spin coating. The structural properties of these thin films were analysed using X-ray diffraction, and the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Gd:ZnO/p-Si heterojunctions were compared with those of the undoped ZnO/p-Si heterojunctions. We found that Gd doping had a strong effect on the performance of the devices, and that the Gd:ZnO/p-Si heterojunctions formed with 1% Gd-doped ZnO were the most strongly rectifying, and had the highest barrier height and the lowest series resistance. Furthermore, the I-V measurements of the 1% Gd-doped ZnO/p-Si heterojunetion exhibited the strongest response to light. (C) 2015 Elsevier B.V. All rights reserved.
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    Modeling of Ti doped CuO/ZnO/AZO thin film solar cell
    (Nova Science Publishers, Inc., 2024) Candan, Ilhan; Baturay, Silan; Gezgin, Serap Yigit; Kilic, Hamdi Sukur
    The CuO thin film in the IV group was grown on a glass substrate using a spin coating technique by doping 2% Ti. The optical properties of these films were characterized using ultraviolet-visible (UV-Vis) spectrophotometry. UV-Vis measurements show that the absorption and energy band gap value of Ti: CuO thin films change due to the different crystal structures of the films. Solar cells based on undoped CuO and Tidoped CuO thin films were modeled using the SCAPS-1D simulation program. Depending on the interface defect density, the values of photovoltaic parameters of the solar cells decreased. An increase in the efficiency of the Ti-doped CuO solar cell was observed with the increase in the hole mobility, but it showed lower performance compared to the undoped CuO solar cell. While the undoped CuO solar cell showed quantum efficiency in the narrow visible region close to the UV region, the Ti-doped CuO solar cell contributed to the quantum efficiency in the wider visible region. As a result of the calculations carried out with the simulation program, it was observed that the Ti atom caused a decrease in the efficiency of the CuO solar cell.. © 2024 Nova Science Publishers, Inc. All rights reserved.
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    Modification of electrical and optical properties of CuO thin films by Ni doping
    (Springer, 2016) Baturay, Silan; Tombak, Ahmet; Kaya, Derya; Ocak, Yusuf Selim; Tokus, Murat; Aydemir, Murat; Kilicoglu, Tahsin
    Undoped and Ni-doped CuO thin films were deposited onto glass substrates using a spin-coating technique at different doping concentrations (undoped, 2, 4, 6, and 10 %). X-ray diffraction patterns for undoped and Ni-doped CuO thin films indicated that the films were polycrystalline, with preferential growth in the (002), (111), and (-311) directions. Atomic force microscopy images revealed that the surface morphologies of the films were not uniform. Scanning electron microscopy images confirmed the presence of agglomerated particles on the surfaces; the coverage increased with the doping level. A Hall effect system with a van der Pauw configuration was used to investigate the electrical properties of the CuO films. The free charge carrier concentration decreased and hole mobility increased with increasing Ni concentration, with the exception of the 10 % Ni-doped CuO sample. Ultraviolet-visible spectroscopy measurements of the film samples indicated an average transmittance of 30-40 % in the visible range. The optical band gap decreased slightly for low-level doping and increased from 2.03 to 2.22 eV for 10 % Ni incorporation. The electrical and optical properties of the CuO films were modified by Ni doping, i.e. the band gap decreased and the mobility increased almost linearly, with the exception of the 10 % Ni-doped sample. SEM images of a undoped b 2 % c 4 % d 6 %, and e 10 % Ni-doped CuO thin films. [GRAPHICS]
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    n-Type conductivity of CuO thin films by metal doping
    (Elsevier Science Bv, 2019) Baturay, Silan; Tombak, Ahmet; Batibay, Derya; Ocak, Yusuf Selim
    Due to its unique electrical and optical properties, copper (II) oxide (CuO) potentially has a wide variety of applications. It is commonly known that CuO has p-type conductivity; however, we report observations of n-type conductivity in thin CuO films by metal doping for the first time. We achieved n-type electrical conductivity in CuO films with cobalt (Co) doping. Undoped and Co-doped CuO thin films were fabricated using a spin coating technique. Electrical parameters, specifically, the charge carrier concentration, sheet resistance, and conductivity type were investigated using a van der Pauw Hall measurement system. By 3 per cent of the cobalt doping conductivity type conversion was observed. The effects of metal doping on the width of the optical band gap were investigated using ultraviolet-visible spectrometry over the wavelength range of 300-1100 nm. The optical band gaps were found to be 1.43, 1.44, 1.44, 1.42 eV for un-doped, 2, 4 and 6% Co doped CuO thin films, respectively. The influence of different concentration ratio on the growth of CuO films was investigated using XRD. Microstrain (e), crystalline size (D) and dislocation density (delta) for all orientations were calculated from XRD analysis. (C) 2017 Elsevier B.V. All rights reserved.
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    Optical and electrical properties of Ni-doped CdO thin films by ultrasonic spray pyrolysis
    (Springer, 2018) Ocak, Yusuf Selim; Batibay, Derya; Baturay, Silan
    Transparent conducting oxides like ZnO, CuO and CdO have applications in photovoltaic solar cells and optoelectronic devices. Recently, much thin film work has investigated the characteristic properties of CdO films. In this work, Ni-doped CdO films in different concentration ratio were successfully deposited on soda lime glass (SLG) substrate using ultrasonic spray pyrolysis (USP) technique. The influence of 1, 2, 3, and 5% Ni concentrations in the films on the structural (orientations, D, epsilon (str) ), morphological (roughness value), optical (transmittance, energy band gap) and electrical properties (electrical conductivity, carrier concentration, Hall mobility) of the deposited CdO thin films was studied, respectively. X-ray diffraction (XRD) studies indicated that the obtained CdO films had good crystallinity and cubic phases with (111), (200), (220), (311), and (222) orientations with increasing Ni concentrations in the thin film. The optical energy band gap, E (g) , was changed from 2.35 to 2.51 eV for wavelengths of 300-1100 nm for soda lime glass substrate. Atomic force microscopy showed the effect of the substrate temperature on the surface morphology and roughness of the obtained films. The roughness value of the obtained films decreased related to increasing of the Ni doped CdO films. Scanning electron microscopy showed nanostructure particles homogeneously distributed on the film surfaces. In addition, the electrical conductivity of the obtained films changed with various Ni concentrations like 0, 1, 2, 3 and 5 at.% in solution for increasing free carrier concentration.
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    Optical, Electrical, and Morphological Effects of Yttrium Doping of Cadmium Oxide Thin Films Grown by Ultrasonic Spray Pyrolysis
    (Springer, 2017) Tombak, Ahmet; Baturay, Silan; Kilicoglu, Tahsin; Ocak, Yusuf Selim
    CdO films doped with Y concentrations of 0%, 1%, 2%, and 3% were deposited onto soda lime glass using ultrasonic spray pyrolysis. The effect of the doping level on the structural, morphological, optical, and electrical properties of the films was characterized. X-ray diffraction analysis was used to establish that all of the samples were polycrystalline and to determine the structural parameters, i.e., lattice spacing (d), phases and associated (hkl) planes, grain size (D), and dislocation density (delta). The films possessed high conductivity and carrier concentration, showing n-type semiconducting behavior. The films were almost transparent over the range from 600 nm to 1100 nm. The energy bandgap was 2.43 eV, 2.53 eV, 2.68 eV, and 2.70 eV for Y doping of 0%, 1%, 2%, and 3%, respectively. The refractive index and extinction coefficient of the films over the range from 700 nm to 1100 nm were determined by spectroscopic ellipsometry. Atomic force microscopy revealed the effect of Y doping on the surface morphology of the CdO films.
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    Production of Cu2SnS3 thin films depending on the sulphur flow rate and annealing temperature time
    (Natl Inst Optoelectronics, 2023) Candan, Ilhan; Gezgin, Serap Yigit; Baturay, Silan; Kilic, Hamdi Sukur
    Cu2SnS3 thin films have been produced using spin coating method for 30 and 40 sccm sulphur flux rate during three annealing times of 15, 30 and 60 minutes at 550 degrees C. Crystal properties, morphological structure, phase structure, elemental contents and optical properties of Cu2SnS3 thin films have comprehensively been studied by XRD, SEM, Raman, EDX, UV-vis, and photoluminescence analysis, respectively. The crystalline size, dislocation density, microstrain and crystalline number of Cu2SnS3 thin films have been calculated. Cu2SnS3-A2 thin film annealed for 30 minutes has the best crystal structure. Cu2SnS3 thin films contain four different phases depending on sulphur flux rate and the annealing temperature duration. In addition, their band gaps, extinction coefficients and Urbach energies were determined. The refractive index and high frequency dielectric constant of Cu2SnS3 thin film were calculated using Herve and Vandamme, Moss and Ravindra relations and the values found were found to be compatible with one another. The skin depth and optical conductivity of Cu2SnS3 thin films were obtained. While the photon energy increased, their skin depth decreased and the optical conductivity considerably increased.