Yazar "Akkilic, K." seçeneğine göre listele

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    The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si
    (Sumy State Univ, Dept Marketing & Mia, 2012) Akkilic, K.; Ocak, Y. S.; Kilicoglu, T.; Toprak, A.
    200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 degrees C for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V) measurements of the structures at room temperature and in dark have been compared with each others.
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    Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode
    (Elsevier, 2010) Akkilic, K.; Ocak, Y. S.; Kilicoglu, T.; Ilhan, S.; Temel, H.
    In this Study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (11) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current-voltage (I-V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I-V characteristics range from 2.15 x 10(13) cm(-2) eV(-1) at (E-c - 0.66) eV to 5.56 x 10(12) cm(-2) eV(-1) at (E-c - 0.84) eV. (C) 2009 Elsevier B.V. All rights reserved.
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    The calculation of electronic parameters of an Ag/chitin/n-Si Schottky barrier diode
    (Elsevier Science Sa, 2006) Akkilic, K.; Aydin, M. E.; Uzun, I.; Kilicoglu, T.
    We have formed polymeric organic compound chitin film on n-Si substrate by adding a solution of polymeric compound chifin in N,N-dimethylacetamide and lithium chloride on top of an n-Si substrate and then evaporating solvent. It has been seen that the chitin/n-Si contact has demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature. The barrier height and ideality factor values of 0.959 eV and 1.553, respectively, for this structure have been obtained from the forward bias I-V characteristics. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitin/n-Si substrate in the energy range from (E-c-0.897) to (E-c-0.574) eV have been determined from the I-V characteristics. The interface state density, N-55, ranges from 5.965 x 10(12) cm(-2) eV(-1) in (E-c-0.897) eV to 1.706 x 10(13) cm(-2) eV(-1) in (E-c-0.574) eV and has an exponential rise with bias this energy range. (c) 2006 Elsevier B.V. All rights reserved.
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    The calculation of electronic parameters of an Au/?-carotene/n-Si Schottky barrier diode
    (Elsevier, 2006) Aydin, M. E.; Kilicoglu, T.; Akkilic, K.; Hosgoren, H.
    An Au/beta-carotene/n-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound beta-carotene in chloroform on top of an n-Si substrate, and then evaporating the solvent. The beta-carotene/n-Si contact shows rectifying behaviour and the reverse curves exhibit a weak bias voltage dependence. The barrier height and ideality factor values of 0.80 eV and 1.32, respectively for this structure, have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range (E-c-0.76) to (E-c-0.53) eV have been determined from the I-V characteristics. The interface state density N-ss ranges from 5.84 x 10(12) cm(-2) eV(-1) in (E-c-0.76) eV to 8.83 x 10(13) cm(-2) eV(-1) in (E-c-0.53)eV. The interface state density has an exponential rise with bias from the mid-gap towards the bottom of the conduction band. (c) 2006 Elsevier B.V. All rights reserved.
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    Characterization of an Au/n-Si photovoltaic structure with an organic thin film
    (Elsevier Sci Ltd, 2013) Ozaydin, C.; Akkilic, K.; Ilhan, S.; Ruzgar, S.; Gullu, O.; Temel, H.
    We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Phi(b) of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 k Omega and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 mu A under light of 8 mW/cm(2). (C) 2013 Elsevier Ltd. All rights reserved.
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    Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode
    (Elsevier Science Sa, 2009) Ocak, Y. S.; Kulakci, M.; Kilicoglu, T.; Turan, R.; Akkilic, K.
    Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have been determined by using current-voltage (I-V) and capacitance-voltage (C-V) measurements of the device at room temperature. Cheung functions and modified Norde functions have been used to obtain the electrical characteristics such as barrier height and series resistance of the diode. It has been seen that the MB layer modifies the effective barrier height of the structure because the layer creates the physical barrier between the metal and the semiconductor. Electrical properties of the device obtained from C-V characteristics have been compared with the ones obtained from its I-V characteristics. It has been seen that at sufficiently high frequencies, the charge at the interface cannot follow an ac signal. The interface state density of the diode has been also calculated. (C) 2009 Elsevier B.V. All rights reserved.
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    Effect of the binuclear Cu(II) complex interface layer on the calculation of electronic properties of Au/Cu(II) complex/n-Si organic-inorganic hybrid heterojunction
    (Elsevier Science Sa, 2008) Akkilic, K.; Ocak, Y. S.; Ilhan, S.; Kilicoglu, T.
    Electronic properties of organic-inorganic (01) hybrid heterojunction fabricated by forming a thin macrocyclic diamagnetic and binuclear Cu(II) complex [Cu-2(L)(ClO4)(2)][ClO4](2) (where L is C33H32N2O4) film on n-Si wafer have been studied. The Au/Cu(II) complex/n-Si contact has a rectifying behavior with the barrier height of 0.96 eV and the ideality factor of 2.96 determined from forward-bias current-voltage (I-V) characteristics at room temperature. The energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu(II) complex/n-Si interface obtained from I-V characteristics ranges from 1.62 x 10(13) cm(-1) eV(-1) at (E-c - 0.66)eV to 6.82 x 10(12) cm(-2) eV(-1) at (E-c - 0.9)eV. (C) 2008 Elsevier B.V. All rights reserved.
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    The importance of the series resistance in calculating the characteristic parameters of the Schottky contacts
    (Elsevier Science Bv, 2006) Aydin, M. E.; Akkilic, K.; Kilicoglu, T.
    Cd/p-Si Schottky barrier diodes (SBDs) with and without the native oxide layer have been fabricated to determine the importance of the fact that the series resistance value is considered in calculating the interface state density distribution (ISDD) from the forward bias current-voltage (I-V) characteristics of the Cd/p-Si SBDs. The statistical analysis yielded mean values of 0.71 +/- 0.02 eV and 1.24 +/- 0.12 for the BH and ideality factor of the Cd/p-Si SBDs (15 dots) without the native oxide layer (MS), respectively, and mean values of 0.79 +/- 0.02 eV and 1.36 +/- 0.06 eV for the Cd/p-Si SBDs (28 dots) with the native oxide layer (metal-insulating layer-semiconductor (MIS)). The interface state density (Nss) distributions of the devices were calculated taking into account their series resistance values. At the same energy position near the top of the valence band, the interface state density values without taking into account the series resistance value of the devices are almost one order of magnitude larger than Nss obtained taking into account series resistance value. (c) 2006 Published by Elsevier B.V.
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    The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application
    (Pergamon-Elsevier Science Ltd, 2016) Ozaydin, C.; Gullu, O.; Pakma, O.; Ilhan, S.; Akkilic, K.
    In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Phi(b)) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit' voltage of 396 mV and a short circuit current of 33.8 mu A under 300W light. (C) 2016 Elsevier Ltd. All rights reserved.