AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters

dc.contributor.authorBenhaliliba, M.
dc.contributor.authorOcak, Y. S.
dc.contributor.authorMokhtari, H.
dc.contributor.authorKilicoglu, T.
dc.date.accessioned2024-04-24T17:47:33Z
dc.date.available2024-04-24T17:47:33Z
dc.date.issued2015
dc.departmentDicle Üniversitesien_US
dc.description.abstractIn this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm - 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO / pSi/Al Schottky is determined and found to be 1012 (eV.cm(2))(-1). Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 angstrom and 0.28 m.en_US
dc.identifier.issn2077-6772
dc.identifier.issn2306-4277
dc.identifier.issue2en_US
dc.identifier.urihttps://hdl.handle.net/11468/22601
dc.identifier.volume7en_US
dc.identifier.wosWOS:000372866800001
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.language.isoenen_US
dc.publisherSumy State Univ, Dept Marketing & Miaen_US
dc.relation.ispartofJournal of Nano- and Electronic Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSpray Pyrolysisen_US
dc.subjectZno / P-Si Schottky Diodeen_US
dc.subjectC-V Characteristicsen_US
dc.subjectCapacitance-Voltageen_US
dc.subjectInterface Densityen_US
dc.titleAC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parametersen_US
dc.titleAC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters
dc.typeArticleen_US

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