REACTIVELY SPUTTERED MoO3 THIN FILMS AND TEMPERATURE DEPENDENCE OF ELECTRICAL PROPERTIES OF AN Ag/MoO3/n-Si DIODE

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dc.contributor.authorCebisli, G.
dc.contributor.authorAsubay, S.
dc.contributor.authorOcak, Y. S.
dc.date.accessioned2024-04-24T17:40:42Z
dc.date.available2024-04-24T17:40:42Z
dc.date.issued2018
dc.departmentDicle Üniversitesien_US
dc.description.abstractMoO3 thin films were deposited onto n-Si and soda lime glass substrates by the reactive sputtering method. The influence of reactive gas flows on the morphological, structural and optical properties of thin films were analyzed by Atomic Force Microscopy (AFM), X-ray Diffraction (XRD) system and UV-Vis data. It was seen that the homogeneity and amorphousness of the films increase with the O-2 ratio. In addition, the Ag/MoO3/n-Si structure was obtained by evaporation of Ag on MoO3/n-Si structure. It was seen that the device had excellent rectification. The electrical properties of Ag/MoO3/n-Si structure were analyzed by current-voltage (I-V) measurements in the dark between 77 and 500 K. It was reported that the temperature had a strong influence on the electrical parameters of the device.en_US
dc.description.sponsorshipDUBAP [15-ZEF-07]en_US
dc.description.sponsorshipThis study is supported by DUBAP with 15-ZEF-07 grand numberen_US
dc.identifier.endpage414en_US
dc.identifier.issn1842-2403
dc.identifier.issn1584-9953
dc.identifier.issue6en_US
dc.identifier.startpage405en_US
dc.identifier.urihttps://hdl.handle.net/11468/21914
dc.identifier.volume14en_US
dc.identifier.wosWOS:000455582000001
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.language.isoenen_US
dc.publisherNatl Inst R&D Materials Physicsen_US
dc.relation.ispartofJournal of Ovonic Research
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMoo3en_US
dc.subjectReactive Sputteren_US
dc.subjectThin Filmen_US
dc.subjectHeterojunctionen_US
dc.titleREACTIVELY SPUTTERED MoO3 THIN FILMS AND TEMPERATURE DEPENDENCE OF ELECTRICAL PROPERTIES OF AN Ag/MoO3/n-Si DIODEen_US
dc.titleREACTIVELY SPUTTERED MoO3 THIN FILMS AND TEMPERATURE DEPENDENCE OF ELECTRICAL PROPERTIES OF AN Ag/MoO3/n-Si DIODE
dc.typeArticleen_US

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